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Fox Group signs fifth license for its silicon carbide patents
This is the fifth non-exclusive and royalty-bearing license agreement Fox Group has signed for its patents related to silicon carbide, a compound semiconductor substrate material. Details of the patent license were not disclosed.

"Having just signed the ...
 
Sumitomo Chemical, Samsung LED team up for sapphire substrates
This joint venture will initially start with an LED sapphire substrate business, aiming to become a comprehensive provider of LED-related materials in the future. Sumitomo revealed that its wholly-owned subsidiary Dongwoo Fine- Chem, which is headquartered in Seoul, commenced ...
 
II-VI expanding SiC operations in Mississippi
The firm says that the devices should enable dramatic increases in efficiency for a wide range of applications related to energy conversion and switching, including commercial hybrid vehicles, smart-grid power switching, green (windmill and solar) energy generation, and ...
 
Wide-bandgap electronics alliance formed in Taiwan
Wide-bandgap materials are often used in applications involving operation at high temperature and high power (above what can be withstood by narrow bandgap materials like silicon).

Alliance members are divided into groups for developing substrate materials, ...
 
Cree launches industry’s first surface-mount 1200-V silicon carbide schottky diode
Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, announces the availability of the industry’s first commercial 1200-V surface-mount SiC Schottky diode. Packaged in an industry-standard surface-mount TO-252 D-Pak, the Schottky diodes ...
 
Cree and Zumtobel extend strategic agreement for LED downlights to accelerate LED lighting revolution
“Cree and Zumtobel see the LED lighting revolution taking hold in Europe and we are excited to sign this agreement and to continue to work together,” said Ty Mitchell, vice president and general manager, Cree LED Lighting. “Zumtobel is a market-leading ...
 
Alcatel-Lucent Bell Labs, Thales and CEA-Leti join forces to combine unique expertise in III-V semiconductors and silicon technologies
Alcatel-Lucent Bell Labs, Thales and CEA-Leti today announced that CEA-Leti has joined the III-V Lab in a move to strengthen the industrial research capabilities of the R&D center, already Europe’s most advanced in the field of III-V semiconductors. The new ...
 
6” wafer capability for CPV solar applications
IQE has been supplying the global chip industry as a pure-play contract manufacturer for more than two decades and is established in GaAs based epiwafer products for wireless applications including RF components for mobile phone handsets. The Group has been working with a ...
 
Nordson ASYMTEK fluid dispensers jet precisely into narrow cavities to improve side-view LED manufacturing process
Nordson ASYMTEK, a leader in dispensing, coating, and jetting technologies, introduces jet dispensing for manufacturing side-view LEDs. The system jets 0.1 to 0.2 mm dots through windows as small as 0.4 mm into the LED cavities. Side-view LEDs illuminate the displays in ...
 
Samsung selects Veeco MOCVD system for advanced GaN-based power electronics research
According to William J. Miller, Ph.D., Executive Vice President of Veeco's Compound Semiconductor Business, "Being selected as a research partner for GaN on Si by SAIT is an important strategic R&D win for Veeco. We look forward to continuing to work with SAIT to ...
 
Monocrystal ships 8-inch C-plane sapphire substrates to leading LED maker
The company points out that it was relatively recently that industry players discussed employing larger than 2-inch sapphire substrates for LED production. At that time, the discussion reportedly revolved around advantages and benefits of switching to 3- vs 4-inch substrates. ...
 
Fox Group signs another license for its silicon carbide patents
This is the fourth non-exclusive and royalty-bearing license agreement Fox Group has signed for its patents related to silicon carbide, a compound semiconductor substrate material. Details of the patent license were not disclosed. "Fox Group is pleased to sign another ...
 
All American expands its semiconductor lineup with Genesic semiconductor
The company’s cost-effective silicon technology is available with quick lead times and offers the best forward voltage drop in the industry.

GeneSiC’s silicon carbide products feature a high operating temperature range, small heat sink requirements ...
 
SemiSouth orders largest commercial capacity SiC Planetary Reactor from Aixtron
The system will be delivered in second-quarter 2011 and commissioned by local Aixtron support team, then used for the production of power silicon carbide (SiC) junction field-effect transistor (JFET) and Schottky barrier diode (SBD) microelectronic devices.

 
Purification process boosts GaN output
The NCSU inventors predict that LEDs, power transistors and other devices cast in GaN will be able to double their outputs by switching to the new process.

The process, invented by EE professor Salah Bedair and materials-science professor Nadia El-Masry, ...
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