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Military spending and GaN adoption driving RF power semiconductor markets
“Gallium nitride increased its market share in 2010,” notes director Lance Wilson. “It is expected to do the same in 2011,” he adds. “Although its adoption hasn’t been as rapid as originally expected, it is nonetheless forecast to be a ...
 
Save the date for the Workshop on Micropackaging and Thermal Management
IMAPS is a well-known society in charge of promoting Microelectronics, Interconnection and Packaging industries as well as supporting high level academic research.
 
Peregrine semiconductor and Soitec announce new bonded silicon-on-sapphire substrate for RFIC manufacturing
Peregrine Semiconductor Corporation, a leading provider of high-performance radio-frequency (RF) integrated circuits (ICs), and Soitec (Euronext Paris), the world’s leading supplier of silicon-on-insulator (SOI) wafers and advanced solutions for the electronics and ...
 
Nitronex launches second GaN HEMT on 2nd-gen platform
The new platform is specifically designed to meet the stringent performance requirements of military communications, jammers and radars. The primary benefit of products based on the platform is very low thermal resistance, which results in higher output power and efficiency in...
 
Industry’s coolest 100W GaN HEMT is now production ready…
Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the
defense, communications, and industrial & scientific markets, has developed a new generation of power transistor platform technology...
 
GaN RF promises better performance than GaAs, Si power tech
The RF3932, which comes on the heels of the 140W RF3934, operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%. It uses simple but optimised matching networks external to the package to provide wideband gain and power performance ...
 
RFMD pushing GaN-based, ZigBee products
RFMD's products on exhibit at electronica 2010 shall consist of GaN-based products, such as the RF3932 – a DC to 3GHz 78-Watt power transistor for high-power applications, and its recently announced RFPD2650 hybrid power doubler amplifier for CATV infrastructure ...
 
20W GaN power amp provides 30% PAE
The TGA2572 from TriQuint Semiconductor delivers 20W for Ku-band (14-16GHz) defence and commercial communications systems. Typical applications include point to point radio and communications.

Key features include 30 per cent power added efficiency (PAE); 24dBm ...
 
RF Micro Devices expands high power GaN product portfolio
RFMD’s unmatched power transistors support "green" architectures that reduce energy consumption, improving thermal management and network efficiency for network operators. The RF3934 operates over a broad frequency range (dc to 3GHz) in a single amplifier ...
 
Fujitsu develops Gallium-Nitride HEMT power amplifier featuring high output power for millimeter-wave W-band
According to the company this HEMT has the world's highest output for the millimeter-wave W-band. The company expects that the millimeter-wave W-band will be widely used in the future.

Fujitsu boasts that the new amplifier will offer transmission output ...
 
Fujitsu develops record 1.3W output W-band GaN HEMT power amplifier
The new amplifier can offer output equivalent to about 16 times that of existing amplifiers using gallium arsenide, enabling W-band transmission ranges to be extended by about six times.

Fujitsu says that the new GaN HEMT-based power amplifier will make ...
 
Mitsubishi Electric to launch GaN HEMTs for L to C band amplifiers
The three models are for L to C band (0.5~6 GHz) amplifiers, which are incorporated into base stations for mobile phones, very small aperture terminals and other transmission equipment. Sample shipments will begin from August 2010.


For microwave ...
 
RFMD ventures into GaAs foundry services
Specifically, RFMD will offer three distinct GaAs pHEMT technologies maximised for high power, low noise and RF switching products. RFMD's 0.3µm pHEMT technology offers high power and is optimised for X-band phased array power amplifiers (PAs) and 8-16GHz wideband ...
 
New EU project to cut power consumption of telecoms networks
Five partner organizations have co joined the BIANCHO project (BIsmide And Nitride Components for High temperature Operation), a three year research and development initiative with funding of €2.190 m through the EU Framework 7 program. The project's goal is to develop ...
 
New GaN transistor realizes long range communication using millimeter waves
The transistor was formed on a silicon (Si) substrate, which can be easily mass-produced and is available in large diameters. The company claims that the transistor has more output power than any other GaN-based transistors in the industry.

Furthermore, at ...
 
Highly sensitive THz detector employs GaN transistor
The company claims it to exhibit the highest sensitivity at room temperature of 1100V/W.

The GaN detector forms a so-called plasma wave of the electrons, in which the electron density is fluctuated as a wave. The plasma wave resonates with the incident THz wave,...
 
TriQuint wins US Air Force contract to design and fabricate GaN modules for new drone aircraft
AFRL says that the new GaN devices will extend the range and capabilities of UAVs that are used for reconnaissance missions over Afghanistan, Iraq and other regions. The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and ...
 
Integra samples first 50V GaN-on-Si device
The high breakdown voltage enables the devices to operate at higher voltages than seen on the market currently, translating into higher performance.

Privately owned Integra was founded in 1997 based on record S-band pulsed performance using patented ...
 
TriQuint wins US air force contract to design and fabricate GaN modules for new drone aircraft
The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and extend battery life in each vehicle.

TriQuint noted that it will develop and fabricate new modules including 20 Watt and 50 Watt devices in-house. The ...
 
Cree’s GaN HEMT MMIC power amplifiers expand company's GaN MMIC PA frequency range through X-Band
“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using...
 
RFMD qualifies second GaN process
The GaN2 high-electron-mobility transistor (HEMT) process technology achieves 1-2dB higher gain and 6dB greater linearity than the firm's GaN1 process at moderately lower power density. GaN1 was qualified in the June 2009 quarter and delivers much higher power density and ...
 
M/A-COM Technology solutions and Mimix Broadband to merge
The company's jointly announced that their respective corporate parents have signed a definitive merger agreement that will add Mimix and its subsidiaries to the M/A-COM Tech family of companies. Mimix is a fabless supplier of gallium arsenide (GaAs) semiconductors for DC to ...
 
Peregrine to manufacture 180-nanometer silicon-on-sapphire CMOS RF integrated circuits on IBM's 8-inch fab.
IBM will manufacture the next-generation UltraCMOS RF ICs for Peregrine in a 180-nanometer process that Peregrine and IBM developed together at IBM's 8-inch semiconductor manufacturing facility in Burlington, Vt.

Peregrine’s UltraCMOS technology is for ...
 
Advantech Wireless Broadband uses GaN for high-density power amplifiers
Advantech believes that its new G series of 50W, 100W and 250W products are the world's smallest Ku-band devices of their type. Due to the margins that their designers have been able to reserve between the operational and maximum specified parameters for the core devices (such...
 
BC Systems introduces GaN-based military RF power amplifier
The Model RF40015 reportedly combines gallium nitride (GaN) RF power transistors with the company’s design and fabrication techniques. According to the company, the device delivers high RF power density in a module measuring only 5.5 x 4.5 x 1.6 in and weighing less than...
 
BreconRidge address`s future Gallium-Nitride based programs & technologies

BreconRidge Corporation packaged and shipped over 90 Gallium-Nitride (GaN) modules to the Canadian Space Agency (CSA) as part of its corporate strategy to extend its core capabilities in next generation Micro Electronic ...

 
ST announces package innovations for high-frequency power devices
Air-cavity packages provide high electrical isolation for silicon die, and are well suited for high-frequency, high-power applications. According to the company, whereas the traditional package body is typically ceramic, to withstand high-temperature soldering during package ...
 
Gain Microwave introduces the GMW3051 high-power VCO GaN MMIC
The GMW3051 is designed to be easily integrated with an external resonator for use as a Voltage Controlled Oscillator. Using a high performance gallium nitride process, the GMW3051 delivers good phase-noise performance and high rf output power, combined with the ability to ...
 
Mitsubishi Electric develops World’s first GaN HEMT amplifier exclusive to satellite applications
With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.

Summary of Sale
 
RFHIC launches 20W GaN-on-SiC power amplifier covering 20–1000MHz
The RWS05020-10 is based on gallium nitride on silicon carbide (GaN-on-SiC) transistors, providing good reliability at high temperature, as well as 36dB of gain and a typical 43dBm @ P3dB with 50% efficiency. Moreover, the physical size is just 2.1” x 1” x ...
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