 |
|
|||
|
||||||||||||||
| July 31st - 10:08 am |
|
RSS FEEDSTo download the latest issue
Home
> COMPOUND SEMI
> RF ELECTRONICS NEWS
> COMPOUND SEMI
> RF ELECTRONICS NEWS
Highly sensitive THz detector employs GaN transistor
The company claims it to exhibit the highest sensitivity at room temperature of 1100V/W.
The GaN detector forms a so-called plasma wave of the electrons, in which the electron density is fluctuated as a wave. The plasma wave resonates with the incident THz wave,...
The company claims it to exhibit the highest sensitivity at room temperature of 1100V/W.
The GaN detector forms a so-called plasma wave of the electrons, in which the electron density is fluctuated as a wave. The plasma wave resonates with the incident THz wave,...
TriQuint wins US Air Force contract to design and fabricate GaN modules for new drone aircraft
AFRL says that the new GaN devices will extend the range and capabilities of UAVs that are used for reconnaissance missions over Afghanistan, Iraq and other regions. The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and ...
AFRL says that the new GaN devices will extend the range and capabilities of UAVs that are used for reconnaissance missions over Afghanistan, Iraq and other regions. The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and ...
Integra samples first 50V GaN-on-Si device
The high breakdown voltage enables the devices to operate at higher voltages than seen on the market currently, translating into higher performance.
Privately owned Integra was founded in 1997 based on record S-band pulsed performance using patented ...
The high breakdown voltage enables the devices to operate at higher voltages than seen on the market currently, translating into higher performance.
Privately owned Integra was founded in 1997 based on record S-band pulsed performance using patented ...
TriQuint wins US air force contract to design and fabricate GaN modules for new drone aircraft
The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and extend battery life in each vehicle.
TriQuint noted that it will develop and fabricate new modules including 20 Watt and 50 Watt devices in-house. The ...
The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and extend battery life in each vehicle.
TriQuint noted that it will develop and fabricate new modules including 20 Watt and 50 Watt devices in-house. The ...
Cree’s GaN HEMT MMIC power amplifiers expand company's GaN MMIC PA frequency range through X-Band
“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using...
“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using...
RFMD qualifies second GaN process
The GaN2 high-electron-mobility transistor (HEMT) process technology achieves 1-2dB higher gain and 6dB greater linearity than the firm's GaN1 process at moderately lower power density. GaN1 was qualified in the June 2009 quarter and delivers much higher power density and ...
The GaN2 high-electron-mobility transistor (HEMT) process technology achieves 1-2dB higher gain and 6dB greater linearity than the firm's GaN1 process at moderately lower power density. GaN1 was qualified in the June 2009 quarter and delivers much higher power density and ...
M/A-COM Technology solutions and Mimix Broadband to merge
The company's jointly announced that their respective corporate parents have signed a definitive merger agreement that will add Mimix and its subsidiaries to the M/A-COM Tech family of companies. Mimix is a fabless supplier of gallium arsenide (GaAs) semiconductors for DC to ...
The company's jointly announced that their respective corporate parents have signed a definitive merger agreement that will add Mimix and its subsidiaries to the M/A-COM Tech family of companies. Mimix is a fabless supplier of gallium arsenide (GaAs) semiconductors for DC to ...
Peregrine to manufacture 180-nanometer silicon-on-sapphire CMOS RF integrated circuits on IBM's 8-inch fab.
IBM will manufacture the next-generation UltraCMOS RF ICs for Peregrine in a 180-nanometer process that Peregrine and IBM developed together at IBM's 8-inch semiconductor manufacturing facility in Burlington, Vt.
Peregrine’s UltraCMOS technology is for ...
IBM will manufacture the next-generation UltraCMOS RF ICs for Peregrine in a 180-nanometer process that Peregrine and IBM developed together at IBM's 8-inch semiconductor manufacturing facility in Burlington, Vt.
Peregrine’s UltraCMOS technology is for ...
Advantech Wireless Broadband uses GaN for high-density power amplifiers
Advantech believes that its new G series of 50W, 100W and 250W products are the world's smallest Ku-band devices of their type. Due to the margins that their designers have been able to reserve between the operational and maximum specified parameters for the core devices (such...
Advantech believes that its new G series of 50W, 100W and 250W products are the world's smallest Ku-band devices of their type. Due to the margins that their designers have been able to reserve between the operational and maximum specified parameters for the core devices (such...
BC Systems introduces GaN-based military RF power amplifier
The Model RF40015 reportedly combines gallium nitride (GaN) RF power transistors with the company’s design and fabrication techniques. According to the company, the device delivers high RF power density in a module measuring only 5.5 x 4.5 x 1.6 in and weighing less than...
The Model RF40015 reportedly combines gallium nitride (GaN) RF power transistors with the company’s design and fabrication techniques. According to the company, the device delivers high RF power density in a module measuring only 5.5 x 4.5 x 1.6 in and weighing less than...
BreconRidge address`s future Gallium-Nitride based programs & technologies
BreconRidge Corporation packaged and shipped over 90 Gallium-Nitride (GaN) modules to the Canadian Space Agency (CSA) as part of its corporate strategy to extend its core capabilities in next generation Micro Electronic ...
ST announces package innovations for high-frequency power devices
Air-cavity packages provide high electrical isolation for silicon die, and are well suited for high-frequency, high-power applications. According to the company, whereas the traditional package body is typically ceramic, to withstand high-temperature soldering during package ...
Air-cavity packages provide high electrical isolation for silicon die, and are well suited for high-frequency, high-power applications. According to the company, whereas the traditional package body is typically ceramic, to withstand high-temperature soldering during package ...
Gain Microwave introduces the GMW3051 high-power VCO GaN MMIC
The GMW3051 is designed to be easily integrated with an external resonator for use as a Voltage Controlled Oscillator. Using a high performance gallium nitride process, the GMW3051 delivers good phase-noise performance and high rf output power, combined with the ability to ...
The GMW3051 is designed to be easily integrated with an external resonator for use as a Voltage Controlled Oscillator. Using a high performance gallium nitride process, the GMW3051 delivers good phase-noise performance and high rf output power, combined with the ability to ...
Mitsubishi Electric develops World’s first GaN HEMT amplifier exclusive to satellite applications
With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.
Summary of Sale
With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.
Summary of Sale
©2007 Yole Developpement All rights reserved Disclaimer | Legal notice | To advertise
Yole Développement: 45 rue Sainte Geneviève, F-69006 Lyon, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr |