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Military spending and GaN adoption driving RF power semiconductor markets
“Gallium nitride increased its market share in 2010,” notes director Lance Wilson. “It is expected to do the same in 2011,” he adds. “Although its adoption hasn’t been as rapid as originally expected, it is nonetheless forecast to be a ...
 
Save the date for the Workshop on Micropackaging and Thermal Management
IMAPS is a well-known society in charge of promoting Microelectronics, Interconnection and Packaging industries as well as supporting high level academic research.
 
Peregrine semiconductor and Soitec announce new bonded silicon-on-sapphire substrate for RFIC manufacturing
Peregrine Semiconductor Corporation, a leading provider of high-performance radio-frequency (RF) integrated circuits (ICs), and Soitec (Euronext Paris), the world’s leading supplier of silicon-on-insulator (SOI) wafers and advanced solutions for the electronics and ...
 
Nitronex launches second GaN HEMT on 2nd-gen platform
The new platform is specifically designed to meet the stringent performance requirements of military communications, jammers and radars. The primary benefit of products based on the platform is very low thermal resistance, which results in higher output power and efficiency in...
 
Industry’s coolest 100W GaN HEMT is now production ready…
Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the
defense, communications, and industrial & scientific markets, has developed a new generation of power transistor platform technology...
 
GaN RF promises better performance than GaAs, Si power tech
The RF3932, which comes on the heels of the 140W RF3934, operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%. It uses simple but optimised matching networks external to the package to provide wideband gain and power performance ...
 
RFMD pushing GaN-based, ZigBee products
RFMD's products on exhibit at electronica 2010 shall consist of GaN-based products, such as the RF3932 – a DC to 3GHz 78-Watt power transistor for high-power applications, and its recently announced RFPD2650 hybrid power doubler amplifier for CATV infrastructure ...
 
20W GaN power amp provides 30% PAE
The TGA2572 from TriQuint Semiconductor delivers 20W for Ku-band (14-16GHz) defence and commercial communications systems. Typical applications include point to point radio and communications.

Key features include 30 per cent power added efficiency (PAE); 24dBm ...
 
RF Micro Devices expands high power GaN product portfolio
RFMD’s unmatched power transistors support "green" architectures that reduce energy consumption, improving thermal management and network efficiency for network operators. The RF3934 operates over a broad frequency range (dc to 3GHz) in a single amplifier ...
 
Fujitsu develops Gallium-Nitride HEMT power amplifier featuring high output power for millimeter-wave W-band
According to the company this HEMT has the world's highest output for the millimeter-wave W-band. The company expects that the millimeter-wave W-band will be widely used in the future.

Fujitsu boasts that the new amplifier will offer transmission output ...
 
Fujitsu develops record 1.3W output W-band GaN HEMT power amplifier
The new amplifier can offer output equivalent to about 16 times that of existing amplifiers using gallium arsenide, enabling W-band transmission ranges to be extended by about six times.

Fujitsu says that the new GaN HEMT-based power amplifier will make ...
 
Mitsubishi Electric to launch GaN HEMTs for L to C band amplifiers
The three models are for L to C band (0.5~6 GHz) amplifiers, which are incorporated into base stations for mobile phones, very small aperture terminals and other transmission equipment. Sample shipments will begin from August 2010.


For microwave ...
 
RFMD ventures into GaAs foundry services
Specifically, RFMD will offer three distinct GaAs pHEMT technologies maximised for high power, low noise and RF switching products. RFMD's 0.3µm pHEMT technology offers high power and is optimised for X-band phased array power amplifiers (PAs) and 8-16GHz wideband ...
 
New EU project to cut power consumption of telecoms networks
Five partner organizations have co joined the BIANCHO project (BIsmide And Nitride Components for High temperature Operation), a three year research and development initiative with funding of €2.190 m through the EU Framework 7 program. The project's goal is to develop ...
 
New GaN transistor realizes long range communication using millimeter waves
The transistor was formed on a silicon (Si) substrate, which can be easily mass-produced and is available in large diameters. The company claims that the transistor has more output power than any other GaN-based transistors in the industry.

Furthermore, at ...
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