Highly sensitive THz detector employs GaN transistor
The company claims it to exhibit the highest sensitivity at room temperature of 1100V/W.

The GaN detector forms a so-called plasma wave of the electrons, in which the electron density is fluctuated as a wave. The plasma wave resonates with the incident THz wave,...

TriQuint wins US Air Force contract to design and fabricate GaN modules for new drone aircraft
AFRL says that the new GaN devices will extend the range and capabilities of UAVs that are used for reconnaissance missions over Afghanistan, Iraq and other regions. The AFRL expects that the more efficient GaN devices will also reduce the need for thermal management and ...