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Jan 10th, 2014
SiC and GaN power devices jostle to grow their role
Efficient Power Conversion Corporation (EPC), Fairchild Semiconductor, GeneSiC Semiconductor, ROHM Semiconductor, and Transphorm tell Andy Extance and Power Dev’ how they’re turning module and system makers towards wide bandgap devices.
Displacement technologies are ‘a very difficult game’, according to Alex Lidow, Chief Executive Officer of El Segundo, California’s Efficient Power Conversion Corporation (EPC). He’s referring to EPC’s eGaN GaN-on-silicon FETs, which he believes can broadly displace silicon MOSFETs in power electronics. But he’s also drawing on his experience in developing and pushing those MOSFETs to displace previous technologies earlier in his career, across El Segundo, at International Rectifier. “It is brutally painful when you come to a customer and say ‘I’ve got a better technology for you’,” Lidow said. “That’s the last thing they want. Give them the same old technology at lower cost, and they’d be happy.”
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