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GaN on Si HEMT vs SJ MOSFET: Technology and Cost Comparison
Mar.2016

yole_gan_on_si_hemt_vs_sj_mosfet_image2
4 490 €

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Description

Icone Yole GaN on Si HEMT vs SJ MOSFET

Will SJ MOSFETs still be attractive compared to GaN devices?

The report proposes an in-depth analysis of the latest innovations in 600/650V power devices showing the differences between SJ MOSFET and GaN HEMT from the technical and economical points of view. It includes details on manufacturing process and materials, packaging structure, component design, die size, electrical performances, current density, etc…

Super Junction technology has been commercially released for the first time in 1998 by Infineon. While new players are entering the market, the historical players are willing to keep the lead by decreasing production cost as low as possible or by introducing different technologies.

GaN on Si HEMTs are good candidates to enter the 600/650V power devices sector but, at the same time, the improvement of silicon SJ MOSFET will keep them on the market and drive towards a standardization and popularization of these devices.

More than 30 devices from different manufacturers have been opened and analyzed to understand SJ MOSFETs and GaN on Si HEMTs technology innovations. The report includes detailed pictures of devices structure and breakdown cost analysis of the manufacturing process.

 Yole GaN on Si HEMT vs SJ MOSFET Image

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table of contents

Overview / Introduction


 

Introduction & Market


 

SJ Mosfets


> Technology Overview
> List of analysed devices
> SJ Mosfets Performances
> Infineon Coolmos
  -Infineon Performances
  -Infineon Evolution
  -SPW47N60C3
  -IPB60R280C6
  -IPD65R225C7


> Toshiba DTMos
  -Toshiba Performances
  -Toshiba Evolution
  -TK40J60T
  -TK10A60W
  -TK31E60W


> STMicoelectronics MDMesh
  -STMicro Performances
  -STMicro Evolution
  -STP16N65M5
  -STL17N65M5
  -STL18N65M5
  -STP30N65M5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GaN HEMT


> Technology Overview
> List of analysed devices
> HEMT Performances
> GaN Systems HEMT
  -GaN Systems Performances
  -GaN Systems Evolution
  -GS66508P
  -GS66506T


> Transphorm HEMT
  -Transphorm Performances
  -Transphorm Evolution
  -TPH3002PS
  -NTP8G206NG

 

GAN HEMT vs SJ Mosfets


> Performances comparison:
  -Rdson evolution
  -QgxRdso FOM
  -Current density


> Cost Comparison
  -Devices supply chain
  -Front end cost
 -Back end cost
  -Packaging cost


> Future Trends

         

 


About the authors



ABOUT SYSTEM PLUS CONSULTING

Headquartered in Nantes, France, System Plus Consulting is specialized in technology and cost analysis of electronic components and systems. During our 20 years in business, we have built and refined detailed cost models as the primary tools for hundreds of analyses.

The highly qualified System Plus cost engineers combine broad and deep skills in semiconductor and electronics technologies with years of experience in cost modeling. We offer:custom reverse costing analyses, standard reverse costing reports and costing tools within the following fields: integrated circuits, power devices and modules, MEMS & sensors, photonics (LED, Image Sensors), packaging and electronic boards and systems. www.systemplus.fr.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE COSTING WITH

  • SJ MOSFETs and GaN HEMTs market

  • Detailed photos and identification

  • Analysis of different SJ MOSFETs structures

  • Analysis of different GaN on Si HEMTs structures

  • In-depth economical analysis

  • Manufacturing cost breakdown

  • Detailed supply chain