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“The past 30 years has witnessed the impressive progress of GaN-based technology in various fields”, comments Dr Hong Lin, Technology & Market Analyst at Yole Développement (Yole). The “More than Moore” market research and strategy consulting company, Yole released today a new technology and market report focused on Bulk GaN substrate, titled Bulk GaN Substrate Market. Under this new analysis, the consulting company presents the different market segments and related drivers and details the status of GaN technologies today.

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The past 30 years has witnessed the impressive progress of GaN-based technology in various fields. Today, commercial GaN-based devices are available for both optoelectronic and electronic applications.

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US LED company Cree says that the Committee on Foreign Investment in the United States (CFIUS) is unlikely to approve the agreed sale of its Wolfspeed Power and RF division (which includes the SiC substrate business for power and RF) to Infineon.

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Cree is terminating plans to sell its power and radio-frequency division, dubbed Wolfspeed, to German semiconductor firm Infineon. The Durham LED maker said late Thursday that the companies were “unable to identify alternatives which would address the national security concerns of the Committee on Foreign Investment in the United States (CFIUS).” 

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The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5 and Veeco K465i reactors.

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Production qualification of 650V AllGaN Power ICs enables a high-speed revolution in power electronics. Navitas Semiconductor announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing integration of digital and analog circuits, leading to ground breaking speed, energy efficiency, power density and reduced system cost.

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