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SiC, GaN, and other Wide Band Gap (WBG) materials for power electronics applications
Sep.2015

gan-on-si_epiwafer_business_model
5 990 €

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Description

couv flyer sicganSiC, GaN, and other WBG materials: a small but growing business!


SiC, GaN, AND OTHER WBG MATERIALS REPRESENT NEW CHOICES FOR POWER ELECTRONICS APPLICATIONS
When people think about WBG materials for power electronics applications, they usually think of GaN or SiC – which is not surprising, since SiC and GaN are currently the most advanced WBG technologies for power electronics applications. However, there are materials with an even larger band gap which can further increase power device performance:

  • Thanks to its high band gap and doping possibility at room temperature, Ga2O3 has been proposed for power electronics applications. Compared to existing SiC and bulk GaN technology, its key selling point is the possibility of using melt growth to make large, inexpensive wafers.
  • Diamond is the ideal candidate for power electronic applications, thanks to a combination of unique properties.
  • Having initially targeted UV LED applications but finding subpar demand, some AlN suppliers are now targeting the power market in order to diversify their activities. AlN’s key value proposition for power applications is the fact that it has the largest band gap.

We invite you to discover state-of-the-art materials like SiC, GaN, Ga2O3, diamond, and AlN, and see the technology roadmap in order to understand the evolution of WBG materials for the power electronics market.

This report also describes alternative technologies for GaN and SiC production and postulates whether a breakthrough is possible that will ameliorate production.

Different crystal diameter expansion 

SiC N-TYPE WAFERS WILL INCREASE TO $110M BY 2020 WITH A 21% CAGR
Driven by the SiC-based power devices market, the n-type SiC substrates market will grow from around $35M in 2014 to $110M in 2020, with a 21% CAGR.

4” wafers are still the market’s preferred product for power electronic applications. However, some suppliers are now able to provide 6” wafers with good enough quality for power devices -- and an 8” SiC wafer was demonstrated by II-VI in 2015.

The average price for 6” is still 2.25x higher than 4”, but the price continues to decrease and will drop below the threshold in late 2015 - early 2016. The transition to 6” is beginning; in fact, ROHM, a SiC device leader, just announced that mass production on 6” wafers will commence in Q3 2015.

The n-type SiC substrate market player rankings have stabilized of late. Cree remains the market leader, with Dow Corning, SiCrystal, and II-VI right behind. There are now four Chinese SiC suppliers, and their current announced capacity is more than 150,000 wafers per year, with further increases expected. Also, in early 2015 TankeBlue demonstrated a 6’’ n-type wafer. Yole Développement views these Chinese players as serious market challengers.

This report contains more information regarding the SiC wafer and epiwafer market players, and a market projection.

Projected SiC n type substrate market size through 2020
MANY PLAYERS ARE COMPETING ON THE GaN-ON-Si EPIWAFER OPEN MARKET. WHAT WILL HAPPEN?
GaN-on-Si technology is very challenging due to large lattice and CTE mismatch between GaN and silicon. That said, GaN-on-Si’s main issues have been resolved and several companies have begun commercializing power devices based on this technology.

Attracted by the device market’s potential, players with different origins are active on the GaN-on-Si epiwafer open market and thinking of selling epiwafers to device players. These players are:

  • Silicon substrate suppliers wanting to move up the value chain, i.e. Siltronic
  • Device foundries like Episil that want to move down the value chain
  • Some LED chip suppliers, i.e. San’an
  • Large epi houses like IQE
  • Epigan and other pure GaN epi houses

Since the power GaN device business is only in its early stages, the related GaN epiwafer open market is not yet well-established. Competition is very intense, and Azzurro’s 2014 bankruptcy has illustrated the risks faced by start-up GaN epi houses.

This report includes a detailed description of the GaN-on-Si epiwafer market and Yole Développement’s vision for its future.

GaN on Si epiwafer business model 

NOT ONLY IS THERE GaN-ON-Si, BUT ALSO GaN-ON-GaN. WHAT’S THE STATUS OF BULK GaN WAFER PRODUCTION?
Almost all commercial GaN wafers are produced by HVPE, mainly used for optoelectronics applications. However, HVPE GaN substrates have an undesirably high dislocation density that restricts their usefulness for power switches.

Ammonothermal growth is expected to be more competitive with the arrival of a new acidic Ammonothermeral method developed by Mitsubishi Chemical and Soraa. Na-flux LPE growth also seems promising for power electronics devices.

Japanese companies dominate the bulk GaN wafer market. Sumitomo Electric, Mitsubishi Chemical, and Hitachi Metals (now Sumitomo Chemical) lead in HVPE production. Mitsubishi is actively developing Ammonothermal growth while NGK is developing Na-flux growth. Non-Japanese players are currently in small-volume production or in the R&D stage, and most of them are developing HVPE methods to target the LED market. If GaN-on-GaN technology is adopted by the power electronics market, Japanese players will maintain their leading position.

This report provides more information on bulk GaN and the alternative solutions being proposed to produce much cheaper bulk GaN and SiC wafers -- which could potentially disrupt the GaN and SiC market.

The objectives of this report are to provide:

  • Analyze the interest in WBG-based materials for power electronics applications
  • Present the SiC wafer and epiwafer industrial landscape and project the market for power electronics applications through 2020
  • Present the GaN-on-Si epiwafer market and its potential for power electronics applications through 2020
  • Describe alternative solutions for GaN and SiC wafer production
  • Discuss the state-of-art bulk GaN market and GaN-on-GaN power devices
  • Provide an overview of the state of Ga2O3, diamond, and AlN for power electronics applications
  • Present the main remaining challenges facing WBG materials players

 

Table of contents

Table of contents 4


What is in this report? 5
Companies cited in the report 6
Executive Summary 7
> Executive summary
> Comparison with Yole Développement’s previous forecast
> Different Crystal diameter expansion history
> WBG materials cost and wafer size comparison
> WBG material for power electronic applications
> SiC n-type substrate market volume projection up to 2020
> SiC n-type substrate average price estimation
> SiC n-type substrate market size (M$) projection up to 2020
> SiC epiwafer open market size estimation up to 2020
> Hypothesis for open market size estimation
> GaN epiwafers open market size (MS)
> The Chicken and the Egg problem in WBG power business
> How to enter into a virtuous circle?
> WBG material for power electronic applications
> Epi business comparison
> Noteworthy news

 

Introduction 25


> Life–cycle of owner device technologies
> WBG value proposition
> Three main choices for power electronics applications
> Other WBG materials
> WBG materials for power electronics overview

 

SiC 31


> SiC device processing
> SiC growth technologies
> SiC: from polytype to devices
> Mapping of SiC players
> Surge of China in SiC wafer production capacity
> Whether Chinese SiC wafer players will reshape the market?
> SiC wafer supplier status
> SiC Bulk wafer manufacturing
> Tentative estimation of market share of n-type
SiC substrate players
> SiC epiwafer manufacturing
> SiC epi house and epi service offers
> Known SiC epi-reactor install-base
> SiC power business model
> Integration of SiC epi
> Dilemma of pure SiC epi house and market evolution
> Remaining challenges of SIC materials
> Current understanding of material science in SiC
> State-of-the-art of defects in SiC substrates and epiwafers
> SiC based MOSFET wafer cost structure
> SiC wafer & epiwafer market estimation
> SiC n-type substrate market volume projection up to 2020
> SiC n-type substrate average price estimation
> SiC n-type substrate market size (M$) projection up to 2020
> SiC epiwafer size (M$) projection up to 2020
> SiC epiwafer open market size estimation up to 2020
> SiC substrate and epiwafer

 

GaN ON Si 62


> GaN/xx epiwafer
> Different substrates for GaN epitaxy
> GaN on SI
> GaN on Si: LED vs power electronics applications
> GaN on Si epiwafer
> GaN on Si epitaxy challenges overview
> Si surface preparation & prevention of the meltback Etching
> Different types of buffer layers
> Crack and wafer bow due to TCE mismatch
> Stress managements
> Dislocation in GaN on Si system
> Dislocation reduction
> 3D à 2D transition
> Gan on Si IP situation
> GaN on Si: remaining issues

 

> Mapping of GaN on Si players
> Main specifications of players
> Company’s evolution
> Business models in GaN power
> GaN on Si epiwafer business model
> Whether LED chip Suppliers will go into GaN epi business?
> GaN LED MOCVD capacity supply vs demand trends
> Intergrate GaN on Si epiwafer?
> Suggested price reduction road map
> GaN on Si epiwafer market volume (Units) estimation up to 2020
> Hypothesis for open market size estimation
> GaN epiwafers open market size (MS)
> Conclusions

 

GaN ON GaN 96


> Different substrates for GaN epitaxy
> Different type of “GaN wafers”
> Key manufacturing steps for FS & Bulk GaN wafer
> Bulk GaN growth methods summary
> Emerging growth methods
> Separation techniques for FS wafers
> Wafer finishing
> Mapping of FS and Bulk GaN players
> Japan is leading in FS / Bulk GaN production
> GaN substrates players overview
> Main specifications of established players
> Main specifications of emerging players
> USA ARPA-E project selection
> Added values of GaN on GaN
> Avogy and its GaN on GaN power devices
> Cost comparison
> Cost reduction of GaN on GaN vertical power devices
> Conclusions


Alternative GaN and SiC Solutions 122


> GaN engineered substrate via Smart Cut™
> Engineered substrate alternatives
> GTAT’s hyperion ion induced Exfoliation
> Disrupt the power devices market by alternative technologies


Ga2O3 127


> Growth method of Ga2O3
> Ga2O3 value proposition for power electronics applications
> Japanese NEDO project
> Ga2O3 devices demonstration
> Ga2O3 MOSFET characteristics
> Commercial Ga2O3 products
> Ga2O3 substrate price
> Ga2O3 single crystal
> Conclusions


Diamond 137


> Diamond R&D and technology roadmap
> Diamond Single-Crystal growth
> Diamond wafer fabrication
> Diamond Mosaic wafer
> Diamond wafer roadmap based on Mosaic wafer method
> Diamond material suppliers
> Supply chain
> Diamond R&D players
> Diamond for power electronics applications
> Diamond materials cost
> Conclusions


AlN 153


> Bulk AlN substrate
> Overview of main substrate manufacturers
> AlN substrate price
> Bulk AlN substrate for power electronics applications
> Conclusions


Discussion 164


> Crystal diameter expansion history
> WBG materials cost and wafer size comparison
> WBG material for power electronic applications
> The Chicken and the Egg problem in WBG power business
> How to enter into a virtuous circle?
> WBG material for power electronic applications


Conclusion 170

Companies cited

Ammono
AETech
Allos
Anvil
Airwater
Avogy
Azzurro
Cree
CrystAl-N
Crystal IS
Dow Corning
Dowa
EDP
Efficient Power Conversion (EPC)
Elementsix
Epigan
Epiworld
Exagan
Episemi
Episil

Fairfield Crystal Technology
Freiberger
Furukawa GaN System
GT Advanced Technologies
Hexatech
Hebei Tongguang
II-VI
Infineon
IQE
Kyma
Mitsubishi Chemical
Nanowin
Nippon Steel
NGK Insulators
Norstel
NTT AT
Panasonic
POSCO
Qmat
ROHM

Saint Gobain (Lumilog)
SAS
SICC
SiCrystal
Siltroic
Shinetsu
Showadenko
Soitec
Sorra
Sumco
Sumitomo Chemical
Sumitomo Electric Industries
SunEdison
Tamura
TankeBlue
TSMC
Transphorm
TYSTC and more.

KEY FEATURES OF THE REPORT

  • Landscape analysis of SiC, GaN, and other WBG materials for power electronics applications
  • SiC wafer and epiwafer market for power electronics applications + market size projection through 2020
  • GaN on Si epiwafer market for power electronics applications + market size projection through 2020
  • State-of-the-art bulk GaN market and GaN-on-GaN power devices
  • Alternative solutions for GaN and SiC wafer production
  • Analysis of state-of-the-art of emerging WBG materials, including Ga2O3, diamond, and AlN for power electronics applications
  • SiC, GaN, and other WBG materials - technology roadmap
  • Analysis of the WBG material market’s dilema, and description of a possible solution