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Wolfspeed C3M™ Platform SiC 900V MOSFET
Aug.2016

wolfspeed_sic_900v_module_cree_system_plus_consulting_2
3 490 €

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Description

Icone Wolfspeed Cree SiC 900V Mosfet report

Wolfspeed (a Cree Company) has proposed the first 900V SiC MOSFET device. The device is a planar MOSFET with lower Rdson, smaller size, and higher current density respective to Cree’s previous-generation SiC MOSFET.

The SiC C3M™ Platform is the first 900V SiC MOSFET platform, designed by Wolfspeed for high-power applications like renewable energy, DC/DC converters, and telecom power supplies.  Compared with previous-generation SiC MOSFETs, this third generation allows for a smaller device, higher current density,  and lower on-resistance for the same current. The SiC C3M™ Platform proposes devices competitive with the latest SJ MOSFETs and GaN HEMT in terms of cost and performance.

The SiC C3M™ Platform includes three devices at different currents, assembled in two packages. This report presents a deep analysis of the C3M0280090 device and an overview of C3M0120090D and C3M0065090D assembled in a TO220 package. Moreover, this report studies the potential evolution of the device’s cost over the next five years according to technology and market trends.


Also included is a comparison with previous Cree SiC MOSFET generations and a cost comparison with Infineon’s Si SJ MOSFET and GaN Systems’ GaN HEMT.

Wolfspeed SiC 900V Module Cree System Plus Consulting bd   Wolfspeed SiC 900V Module Cree System Plus Consulting 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table of contents

Overview / Introduction


Executive Summary
Reverse Costing Methodology

 

Company Profile


C3M Platform Characteristics


Physical Analysis  - C3M0280090


Synthesis of the Physical Analysis
Package Analysis
 > View, dimensions and marking
 > Package opening
 > Package cross-section
SiC MOSFET
 > Dimension
 > Details
 > Cross-section
SiC C3M Family
 > MOSFET C3M0120090D
 > MOSFET C3M0065090D
Comparison Between Cree MOSFET Gen1, Gen2, and Gen3


  

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Manufacturing Process Flow


Overview
MOSFET Process Flow
MOSFET Fabrication Units
Package Process Flow

 

Cost Analysis


Synthesis of the Cost Analysis
Main Steps of Economic Analysis
Yields Explanation
MOSFET Cost Analysis
 > MOSFET wafer cost
 > Back-end cost
 > MOSFET die cost
C3M0280090D Cost Analysis
 > Module cost
Cost Evolution Analysis

 

Estimated Manufacturer’s Price Analysis


Manufacturers’ Ratios    
Estimated Manufacturer Price

 

Comparison with Infineon’s Si SJ MOSFET and GaN Systems’ GaN HEMT


 


About the authors



ABOUT SYSTEM PLUS CONSULTING

Headquartered in Nantes, France, System Plus Consulting is specialized in technology and cost analysis of electronic components and systems. During our 20 years in business, we have built and refined detailed cost models as the primary tools for hundreds of analyses.

The highly qualified System Plus cost engineers combine broad and deep skills in semiconductor and electronics technologies with years of experience in cost modeling. We offer:custom reverse costing analyses, standard reverse costing reports and costing tools within the following fields: integrated circuits, power devices and modules, MEMS & sensors, photonics (LED, Image Sensors), packaging and electronic boards and systems. www.systemplus.fr.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE COSTING WITH

  • Detailed photos

  • Precise measurements

  • Material analysis

  • Manufacturing process flow

  • Supply chain evaluation

  • Manufacturing cost analysis

  • Cost evolution analysis

  • Estimated sales price

  • Comparison between Cree SiC MOSFET Gens 1, 2, and 3

  • Comparison between SiC MOSFET, SJ MOSFET, and GaN HEMT