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Preparing SiC wafer growth for SiC industry growth

The need for high voltage and high current devices for multiple applications, particularly electric and hybrid vehicles, trains, in electricity transport and distribution and smart grid, is pushing changes that suit a new semiconductor material: SiC.
In 2014, the SiC chip business was worth more than $133M. As diode penetration keeps increasing and transistors start to be implemented in different applications, SiC market value is expected to grow steadily at a 14.3% CAGR from 2015–2020.


Supply chain, market positioning, business opportunities and company value: what can we expect for the semiconductor industry? Successful Semiconductor Fabless 2015 (SSF 2015)

Successful Semiconductor Fabless 2015 - SSF 2015. From Nov. 4 to 6, 2015, Paris, France
Today, the semiconductor supply chain offers a lot of possibilities in terms of business models. Companies have many opportunities to develop their own components all across the market. They can develop designs, integrate software, focus on sensitive elements and propose dedicated packaging. There are many possibilities – but maybe just one way to optimize a company's value.


II-VI Advanced Materials demos first 200mm SiC wafer

II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, exhibited what is said to be the first 200mm-diameter SiC wafer at the 2015 Compound Semiconductor Manufacturing Technology (CS MANTECH) conference in Scottsdale, AZ, USA and the International SiC Power Electronics Applications Workshop (ISiCPEAW 2015) in Stockholm, Sweden in late May.


Vertical Schottky barrier diodes on free-standing gallium nitride

Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014].


AlN Schottky barrier diode makes its debut

A team of researchers based in Japan and the US is claiming to have fabricated the first vertical Schottky barrier diodes made from AlN.

These devices promise to deliver a superior performance to existing wide bandgap devices, due to their much higher bandgap that leads to a far higher electric breakdown field.


Efficient Power Conversion introduces eGaN® Power Integrated Circuit for a new benchmark in efficiency and cost for A4WP Rezence™ Wireless Power Transfer

New EPC2107 and EPC2108 eGaN power integrated circuits include monolithic half bridge and integrated bootstrap functions for A4WP compliant Class 2 and Class 3 solutions.



> 1st Int. Forum on Sapphire Market & Technologies
(August 31 - September 1, Shenzhen, China)

(October 4 - October 9, Giardini Naxos, Italy)