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Cree introduces new 900V SiC MOSFET family at PCIM

At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH — showcased its portfolio of SiC diodes, MOSFETs, modules, and bare die (including introducing a new family of 900V SiC MOSFETs) and demonstrated how its SiC technology can enable smaller, lower-cost and more efficient power systems capable of switching at higher frequencies and operating at higher temperatures.

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X-FAB and Exagan partner to develop robust production process for high-volume GaN-on-Silicon devices on 200mm wafers

Leading Silicon Foundry and new GaN start-up collaborate to increase manufacturability and reduce costs for highly efficient power switches.

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Research Institutes globally invest in Oxford Instruments plasma systems for graphene and 2D materials development

Multiple orders have recently been received from prestigious research centres in Europe and the USA for Nanofab® equipment

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Fourth-Generation GaN-on-Si Surpasses LDMOS

M/A-COM Technology Solutions Holdings, Inc. announced its fourth-generation of Gallium-Nitride-on-Silicon (GaN-on-Si) technology.

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CREE to spin off Power and RF subsidiary in an IPO

Cree today announced that Cree’s wholly owned Power and RF subsidiary has submitted a draft registration statement on a confidential basis to the U.S. Securities and Exchange Commission for a potential initial public offering of the subsidiary’s Class A common stock.

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University of Akansas to develop SiC Data Converters

$20k NSF grant for chips that can acquire and process data in internal combustion engines.

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UPCOMING EVENTS


> 1st Int. Forum on Sapphire Market & Technologies
(August 31 - September 1, Shenzhen, China)

> ICSCRM
(October 4 - October 9, Giardini Naxos, Italy)
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