powered by:
yole développement

Slider home

Research Institutes globally invest in Oxford Instruments plasma systems for graphene and 2D materials development

Multiple orders have recently been received from prestigious research centres in Europe and the USA for Nanofab® equipment

Read more...

Fourth-Generation GaN-on-Si Surpasses LDMOS

M/A-COM Technology Solutions Holdings, Inc. announced its fourth-generation of Gallium-Nitride-on-Silicon (GaN-on-Si) technology.

Read more...

CREE to spin off Power and RF subsidiary in an IPO

Cree today announced that Cree’s wholly owned Power and RF subsidiary has submitted a draft registration statement on a confidential basis to the U.S. Securities and Exchange Commission for a potential initial public offering of the subsidiary’s Class A common stock.

Read more...

University of Akansas to develop SiC Data Converters

$20k NSF grant for chips that can acquire and process data in internal combustion engines.

Read more...

X-FAB and Exagan partner to develop robust production process for high-volume GaN-on-Silicon devices on 200mm wafers

Leading Silicon Foundry and new GaN start-up collaborate to increase manufacturability and reduce costs for highly efficient power switches.

Read more...

GaN Systems raises $20 million venture funding

Financing to support international sales and to further expand manufacturing line.

Read more...

UPCOMING EVENTS


> ISiCPEAW
(May 26 - May 28, Stockholm, Sweden)

> 1st Int. Forum on Sapphire Market & Technologies
(September 3 - September 3, Shenzhen, China)

> ICSCRM
(October 4 - October 9, Giardini Naxos, Italy)
24