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  >  ANALYSIS
Turn-key systems unlock the sapphire market
Turning a crucible full of purifi ed alumina into a pristine sapphire crystal that can weigh over 100 kg is a feat that embodies power.
It requires abundant energy to raise the material to temperatures beyond 2000ºC and reach the molten state from which a boule will ultimately crystallize....

Source: Source: iLED March 2012 – Powered by Yole Développement
 
 
  >  INTERVIEW
Sapphire ingot prices are at bottom, says USI Optronics
The Toufen, Taiwan, based sapphire ingot supplier will seek to expand output as it anticipates new entrants will struggle to establish themselves in the market....
 
 
  >  REVERSE ENGINEERING
GaN HEMT transistor from EPC
Gallium nitride (GaN) Transistors’ characteristics exceed those of conventional Si MOSFET or IGBT, as well as low Rdson, higher current density and higher electron mobility....

Source: Power Dev' Jan. 2012 – Powered by Yole Développement
 
 
  >  LATEST REPORT
GaAs Wafer Market & Applications
RF electronics currently fuels the GaAs wafer market… But LEDs will rapidly lead the growth GaAs....
 
 
  >  PRESENTATION
GaN Power Electronics Slow ramp-up but huge expectations...
Feel free to download Philippe Roussel's presentation held at CS Europe 2012 ... ...
 
 
  >  YOLE DEVELOPPEMENT EVENTS
ISiCPEAW 2012
This workshop presents advances in silicon carbide technology with a strong focus on Power Electronics applications. This event is organized by Acreo, Yole Développement, the Royal Institute of Technology and Enterprise Europe Network. ...
 
 
  >  TECHNOLOGY MAGAZINE
 
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  >  NEWS
May 4th 2012
In a breakthrough that redefines performance and energy efficiency in high-power ...

April 27th 2012
RFMD's newest GaN process technology -- rGaN-HV™ -- enables substantial system ...

April 23rd 2012
The agreement follows a successful process qualification at the Ferdinand Braun ...

April 23rd 2012
These latest equipment designs enable thin wafer handling technologies that can broaden...

April 23rd 2012
Yole Développement announces its report “GaAs Wafer Market & ...

April 18th 2012
In this report, Yole Développement covers established and emerging epitaxy ...

April 17th 2012
The new Comprehensive Research and Development Agreement (CRADA) will utilize ...

April 3rd 2012
The Probus-SiC can handle film growth on substrates up to six inches. It also features ...

March 31st 2012
Oxford Instruments has transferred its ownership of TDI, a wholly owned subsidiary ...

March 31st 2012
The consideration for this sale will be $17 million in cash, subject to closing ...

March 31st 2012
Oclaro, Inc. (Nasdaq: OCLR), a tier-one provider and innovator of optical ...

March 31st 2012
GT Advanced Technologies Inc., (NASDAQ: GTAT), announced that it has received a $12.6 ...

March 27th 2012
This order, supplying one Epineat model MBE machine in 2012, will develop laboratory's ...

March 20th 2012
The research team has worked on SiC growth processes over many years, and since ...

March 19th 2012
Investment will spur continued growth of clean-tech jobs in Mississippi.


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