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  March 13th - 01:06 pm
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  >  TOP STORY
OSRAM Opto Semiconductors presents first OLED light source
Light, thin, non-glare and warm white – Orbeos is the first OLED light source from OSRAM Opto Semiconductors for premium quality functional lighting. The new energy-efficient surface-emitting panel is especially suited to applications in the premium segment such as architecture, hotels and ...
 
 
  >  SPECIAL EVENT
 
 
  >  PRESENTATION
Thick SOI susbtrate market: a 10% CAGR to 2012
The term thick-SOI refers to a semiconductor substrate with an active, single-crystal silicon layer whose thickness exceeds 1µm. It lies on a buried oxide which is set on top of a silicon wafer carrier. This structure is widely used in MEMS and in Power Device electronics. In 2007, thick-SOI substrates accounted for a $72M market, representing approximately 380,000 6” (equiv.) wafer units.MEMS ...
 
 
  >  INTERVIEW
InPACT CEO argues on InP market recovery
InPACT is the primary producer of Indium Phosphide (InP) 2”, 3” and 4” substrates outside of Japan. The company sells the 2” diameter mainly for opto telecom and datacom chips; the 3” and 4” products are used for high speed ICs and PICs. InPACT keeps its technical edge on surface contamination and local flatness performance and grows the longest InP boules (see below a 4” boule standard ...
 
 
  >  WHITE PAPER
Wide BandGap RF devices : a $100m market by 2010
What can displace the Si LDMOS monopoly? ...
 
 
  >  LATEST REPORT
Sapphire substrate Market 2010
A comprehensive survey of the main market metrics and companies’ involvement in sapphire materials for electronic applications...
 
 
  >  NEWS
   > Materials & Equipment
   > Optoelectronics
   > RF electronics
 
 C.S. Materials & Equipment
Feb 28th
TDI wins $600K to boost production of SSL materials
This Clean Energy Economic Development Initiative award will enable TDI to hire three new ...

IQE's Wafer Technology division extends GaSb substrate range to 4"
GaSb materials are used in the manufacture of a wide range of products including infrared ...

Kyma wins $2.8m DoD funding for low-defect GaN development
This funding (included in the Fiscal Year 2010 Department of Defense Appropriations Bill) ...

White LED demand 'faces challenge of MOCVD tool backlog'
White light emitting diode (LED) demand will increase with the announcement by Apple of ...

Key milestone for graphene wafers
Graphene is an ideal candidate for many high-speed computing applications in the ...

   All the Materials & Equipment news of the month
 
 
 C.S. Optoelectronics
Mar 11th
Toyoda Gosei shows glass-packaged white LED
The light quantity of the LED package does not decrease as much as normal white LEDs using...

OSRAM bits direct green laser diodes world record output CW power and efficiency
This optical power level is necessary for rgb scanning beam laser projection with 10-15 ...

Luminus Devices raises $19 million
The round was led by current investors Argonaut Private Equity, Braemar Energy Ventures, ...

TSMC to install equipment at LED R&D center in 4Q10, say sources
The R&D center, to be located at the Hsinchu Science Park (HSP), will target the LED ...

Luminus Devices raises $19 million in Venture funding
This investment creates a fully funded operating plan to increase profitability, maintain ...

   All the Optoelectronics news of the month
 
 
 C.S. RF electronics
Mar 11th
Gain Microwave introduces the GMW3051 high-power VCO GaN MMIC
The GMW3051 is designed to be easily integrated with an external resonator for use as a ...

Mitsubishi Electric develops World’s first GaN HEMT amplifier exclusive to satellite applicati
With these products, Mitsubishi Electric will become the first company in the world to ...

RFHIC launches 20W GaN-on-SiC power amplifier covering 20–1000MHz
The RWS05020-10 is based on gallium nitride on silicon carbide (GaN-on-SiC) transistors, ...

Gain Microwave introduces the GMW1601 high power GaN HFET RF switch
The GMW1601 is a high-power broadband GaN HFET SPDT RF switch, covering DC to 6 GHz and ...

100GHz RF graphene transistor trumps GaAs ICs
Fabricated on new 2-inch graphene wafers and operating at room temperature, the RF ...

   All the RF electronics news of the month
 
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