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Cree and Philips both hold broad and substantial optoelectronic patent portfolios that are important to their respective businesses. The new agreement covers patents from both parties in the fields of blue LED chip technology, white LEDs and phosphors (including remote phosphors), control systems, ...

 
  >  SPECIAL EVENT

 
  >  PRESENTATION
The term thick-SOI refers to a semiconductor substrate with an active, single-crystal silicon layer whose thickness exceeds 1µm. It lies on a buried oxide which is set on top of a silicon wafer carrier. This structure is widely used in MEMS and in Power Device electronics. In 2007, thick-SOI substrates accounted for a $72M market, representing approximately 380,000 6” (equiv.) wafer units.MEMS ...
 

 
  >  INTERVIEW
InPACT is the primary producer of Indium Phosphide (InP) 2”, 3” and 4” substrates outside of Japan. The company sells the 2” diameter mainly for opto telecom and datacom chips; the 3” and 4” products are used for high speed ICs and PICs. InPACT keeps its technical edge on surface contamination and local flatness performance and grows the longest InP boules (see below a 4” boule standard ...
 

 
  >  WHITE PAPER
Please download Jeff Perkins’ presentation made during Semicon West 2010 ...

 
  >  LATEST REPORT
A comprehensive survey of usage and markets through 2013 for: GaAs, GaP, InP, SiC, Sapphire and bulk-GaN...
 
  >  TECHNOLOGY MAGAZINE
 
First issue on November 5, 2010

 
  >  NEWS

 
 C.S. Materials & Equipment
Sep 2nd
Cree's current standard for SiC substrates is 100mm-diameter material.

Used...

The deal consists of about $24m in cash, 5.4 million shares of GT Solar common stock, and ...

The company has also achieved direct bonding of sapphire with Si at room temperature.

GT Solar International, Inc. ("GT Solar"), a leading global provider of ...

Realized by a room-temperature wafer bonding machine developed by MHI which enables highly...

 
 
 C.S. Optoelectronics
Aug 24th
Crystal IS specializes in ultraviolet light-emitting diodes (UV LEDs) on aluminum ...

Luminus Devices and Epistar announced a licensing agreement that will allow Epistar to ...

Following the success of the ISL 2008 – 2nd ...

They claimed that the development of the new diode laser is a giant step toward multilayer...

In recently-published testing results Crystal IS demonstrated for the first time ...

 
 
 C.S. RF electronics
Aug 24th
Five partner organizations have co joined the BIANCHO project (BIsmide And Nitride ...

The transistor was formed on a silicon (Si) substrate, which can be easily mass-produced ...

The company claims it to exhibit the highest sensitivity at room temperature of ...

AFRL says that the new GaN devices will extend the range and capabilities of UAVs that are...

The high breakdown voltage enables the devices to operate at higher voltages than seen on ...

 
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