powered by:
yole développement

Slider home

Make sure you will be there!

IntelliEPI acquires Soitec's GaAs epi business

Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, has announced the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics subsidiary (based at Villejust in Essonne, France) to Intelligent Epitaxy Technology Inc (IntelliEPI) of Richardson, TX, USA.

Read more: IntelliEPI acquires Soitec's GaAs epi business

New Swedish manufacturer of advanced deposition equipment for wide band gap semiconductor materials

Epiluvac AB now offers Silicon Carbide CVD epitaxy reactors in various configurations.

Silicon carbide is one of the most interesting semiconductor materials in electrical power components for energy savings.

Read more: New Swedish manufacturer of advanced deposition equipment for wide band gap semiconductor materials

More industrial segments adopt SiC technology

Silicon Carbide (SiC) propagates over all industrial segments, announces Yole Développement (Yole), the market research, technology and strategy consulting company. Power factor corrector (PFC), photovoltaic inverter, motor control … and more represented a $100 million business in 2013.

Read more: More industrial segments adopt SiC technology

AIXTRON Partners with Fraunhofer IISB to enhance silicon carbide production technology

Research program based on Planetary Reactor AIX G5WW starts end of 2014.

AIXTRON, a leading provider of deposition equipment to the semiconductor industry, has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany,

Read more: AIXTRON Partners with Fraunhofer IISB to enhance silicon carbide production technology

SDK increases capacity to produce 6” SiC epi-wafers for power devices

Contributes to the spread of next-generation power devices by improving productivity and quality.

Showa Denko (SDK) (TOKYO: 4004) increased its capacity to produce silicon carbide (SiC) epitaxial wafers with a diameter of six inches (150mm) for use in power devices from 400 units a month to 1,100 units a month. As a result, SDK increased its total capacity to produce SiC epitaxial wafers in terms of four-inch (100mm) wafers from 1,500 units a month to 2,500 units a month, an increase of about 60% from the previous level. SDK will also start shipping of a new grade of SiC epitaxial wafers with fewer defects and higher uniformity in this October.

Read more: SDK increases capacity to produce 6” SiC epi-wafers for power devices

LATEST EVENTS

Wed Sep 24 @12:00AM
ECSCRM
Thu Sep 25 @12:00AM
ECSCRM
Tue Oct 07 @12:00AM
SEMICON EUROPA
Wed Oct 08 @12:00AM
SEMICON EUROPA
Thu Oct 09 @12:00AM
SEMICON EUROPA

Latest reports