Gain Microwave introduces the GMW3051 high-power VCO GaN MMIC
The GMW3051 is designed to be easily integrated with an external resonator for use as a Voltage Controlled Oscillator. Using a high performance gallium nitride process, the GMW3051 delivers good phase-noise performance and high rf output power, combined with the ability to ...

Mitsubishi Electric develops World’s first GaN HEMT amplifier exclusive to satellite applications
With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.

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