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> PRESENTATION
The term thick-SOI refers to a semiconductor substrate with an active, single-crystal silicon layer whose thickness exceeds 1µm. It lies on a buried oxide which is set on top of a silicon wafer carrier. This structure is widely used in MEMS and in Power Device electronics. In 2007, thick-SOI substrates accounted for a $72M market, representing approximately 380,000 6” (equiv.) wafer units.MEMS ...
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 > LATEST REPORT
 > NEWS Jul 22nd
Realized by a room-temperature wafer bonding machine developed by MHI which enables highly...
Launched in July 2009, the multi-partner R&D program focuses on the development of ...
Strathclyde University, UK, has secured a spin-out deal to form a company called mLED. The...
The company points out that the demonstration is the first step in establishing the ...
Kyma has doubled its staff over the past two years and is running out of expansion space ...
Jul 23rd
Following the success of the ISL 2008 – 2nd ...
They claimed that the development of the new diode laser is a giant step toward multilayer...
In recently-published testing results Crystal IS demonstrated for the first time ...
The oscillation wavelength of the laser is 510nm, which is a little short for green color....
So, Everlight is attempting to secure both orders and supply with the joint venture. The ...
Jul 2nd
The company claims it to exhibit the highest sensitivity at room temperature of ...
AFRL says that the new GaN devices will extend the range and capabilities of UAVs that are...
The high breakdown voltage enables the devices to operate at higher voltages than seen on ...
The AFRL expects that the more efficient GaN devices will also reduce the need for thermal...
“We are pleased to expand our existing GaN power amplifier MMIC line and introduce ...
The GaN2 high-electron-mobility transistor (HEMT) process technology achieves 1-2dB higher...
The company's jointly announced that their respective corporate parents have signed a ...
IBM will manufacture the next-generation UltraCMOS RF ICs for Peregrine in a 180-nanometer...
Advantech believes that its new G series of 50W, 100W and 250W products are the world's ...
The Model RF40015 reportedly combines gallium nitride (GaN) RF power transistors with the ...
BreconRidge Corporation packaged and ... Air-cavity packages provide high electrical isolation for silicon die, and are well suited...
The GMW3051 is designed to be easily integrated with an external resonator for use as a ...
With these products, Mitsubishi Electric will become the first company in the world to ...
The RWS05020-10 is based on gallium nitride on silicon carbide (GaN-on-SiC) transistors, ...
The GMW1601 is a high-power broadband GaN HFET SPDT RF switch, covering DC to 6 GHz and ...
Fabricated on new 2-inch graphene wafers and operating at room temperature, the RF ...
The design integrates Nujira's Coolteq.h envelope tracking power modulators with RFMD's ...
TriQuint Semiconductor, a leading RF products manufacturer and foundry services provider, ...
The device uses tiny aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron ...
Identified as XP5002- BD, this device includes on-chip gate bias circuitry and delivers ...
This product is ideal for military and ISM (industrial, scientific and medical) ...
The technology enables a power amplifier to amplify eight frequency bands ranging from ...
Nitronex Corp of Durham, NC, USA, which manufactures gallium nitride on silicon ...
RF Micro Devices, Inc., a manufacturer of high-performance radio frequency components and ...
RF Micro Devices Inc released a new product for high power commercial and defense ...
Toshiba Corp. has announced development of a gallium nitride (GaN) power field effect ...
Motorola of Horsham, Pennsylvania USA, reportedly implemented its gallium nitride ...
Hillsboro-based TriQuint (NASDAQ: TQNT) will take part in the agency’s Nitride Electronic ...
Microsemi Corporation a manufacturer of high performance analog mixed signal integrated ...
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Yole Développement: 45 rue Sainte Geneviève, F-69006 Lyon, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr