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Key Points In a world first, BluGlass’ RPCVD technology achieves a...




The GaN wafers developed by NGK feature low defect density across the entire 2-inch ...




These devices represent the first commercial availability of GaN-based components from ...




November 2nd 2012
This work in Near Junction Thermal Transport (NJTT) is expected to set the stage for ...




October 25th 2012
The company opened in 2010 with high hopes of maintaining good paying jobs for close to...




Suzhou Hyperion Geocrystal Co. Ltd. announced it has achieved volume production of ...




The successful completion of the joined project confirmed the excellent performance ...




The diamond-based multilayered structure outlined in the patents solves several ...




Soraa, the world's leading developer of GaN on GaNTM (gallium nitride on gallium ...




GaN is characterized by superior electron mobility, higher breakdown voltage and good ...




Richardson RFPD, Inc. today announces immediate availability and full design support ...




Yole Développement provides market research, technology ...




The MGFK47G3745, featuring industry-leading output power of 50W, linear gain of 9dB and...




Kyma’s GaN crystal growth system is based on the hydride vapor phase epitaxy ...




The chemical vapor deposition (CVD) system will be used to produce homoepitaxial ...





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