IGBT technology is nearing its 30th anniversary. Over the years it’s grown by leaps and bounds, to the point where it is ubiquitous in today’s power electronics scene: featuring in everything from 300V SMD IGBT for camera flashes to 6.5kV stacks for HVDC energy transmission systems.
IGBT currently sits on the cusp of a new era. Established players still lead the market in sales, production volume and innovation, but Asian players are investing heavily in order to catch-up. In fact, nobody would be surprised if Chinese IGBTs were commonplace within the next five years. This would open the door to a new business model based on Fabless-foundry, something totally new to power electronics, and change the stakes considerably. Add to this all of the potential future consumer applications (EV/HEV cars and chargers, PV, cooking systems, etc.), and competition with higher-performance solutions (SiC and GaN), and the result is a market headed for a new evolution.
Join our webcast for answers to the following important questions:
. How much do we know about Chinese players, new applications, and SiC and GaN device performance?
. What reaction do we expect from the IGBT market?
Alexandre Avron is a full time analyst in power electronics at Yole Développement. He was granted a Master degree in Electrical engineering, with a major in power electronics and microelectronics processes, from Applied Sciences National Institute (INSA) of Lyon, France.
Philippe Roussel, Ph.D holds a Ph-D in Integrated Electronics Systems from the National Institute of Applied Sciences (INSA) in LYON. He joined Yole Développement in 1998 and is Business Unit Manager of the Compound Semiconductors and Power Electronics department.