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> GaN-on-Si, a disruptive technology?

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Jean-Christophe Eloy, CEO & President - Philippe Roussel, Business Unit Manager, Yole Développement

June 03, 2014 - 08:00 AM PDT


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Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too ? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?
Among all widely diffused compound semi materials, GaN is the only one for which bulk crystal remains extremely expensive. Therefore, any alternate substrate to grow GaN epi is strongly welcomed. Silicon is seen as one of the most promising solutions as it offers large diameter, low cost and existing CMOS manufacturing capabilities all over the world.
RF was the first application trying to capture the added-value of GaN-on-Si for commercial products (Nitronex 1999). LED then joined the battlefield with Lattice Power then more recently Toshiba and Bridgelux, aiming to displace sapphire domination. In power switching, pioneers were International Rectifier and EPC, followed by numerous new entrants since then, all targeting low cost, high power conversion efficiency devices. Only lasers seem linked to bulk GaN forever.
This presentation will highlight the remaining challenges to spread GaN-on-Si over all possible applications, from a market, technology, industry and IP viewpoints.
Join our live webcast to learn more about GaN


Jean-Christophe Eloy, CEO and Founder, Yole Développement
Since 1991, he has been involved in the analysis of the evolution of MEMS markets at device, equipment and also materials suppliers’ level. Jean-Christophe Eloy is also board member in several organizations in Europe and in North America.




Dr Phillippe Roussel,  PhD, Business Unit Manager, Compound Semiconductors
Dr Roussel hold s a PhD in  Integrated Electronics Systems from the National  Institute of Applied Sciences (INSA) in LYON. He joined Yole Développement in 1998 and is  leading  the Compound Semiconductors,  LED,  Power Electronics and Photovoltaic department.




The topic presented during this webcast is based on the following analyses: RF GaN Technology & Market Analysis - GaN-on-Si Substrate Technology and Market for LED and Power Electronics - GaN-on-Silicon Substrate Patent Investigation - Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics - Power GaN - LED Front-End Manufacturing Trends. More information here.

Feel free to contact Sandrine Leroy (leroy@yole.fr) if you need further information.

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