<?xml version='1.0' encoding='iso-8859-1'?><rss version='2.0'><channel><language>en</language><copyright>Copyright 2007, Yole Developpement</copyright><title><![CDATA[I-micronews - CS]]></title><link>http://www.i-micronews.com/thematique.asp?them=3</link><description><![CDATA[COMPOUND SEMI]]></description><lastBuildDate>Wednesday, 19 Jun 2013 00:03:21</lastBuildDate><item><title><![CDATA[Air Liquide to acquire Voltaix, an electronics materials company]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10617</link><pubDate>Wednesday, 19 Jun 2013 00:03:22</pubDate><description><![CDATA[Air Liquide has signed an agreement to acquire Voltaix Inc., a U.S. based electronics materials company.]]></description></item><item><title><![CDATA[5N plus expands Asian footprint with new investment in South Korea]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10620</link><pubDate>Wednesday, 19 Jun 2013 00:03:22</pubDate><description><![CDATA[5N Plus Inc. (VNP.TO), the leading producer of specialty metal and chemical products, announces that it will invest in a new gallium chemicals facility to be located in South Korea , one of the fastest growing regions for electronics manufacturing in the world. ]]></description></item><item><title><![CDATA[Sapphire and LED in Korea - Program Update]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10602</link><pubDate>Monday, 17 Jun 2013 10:10:44</pubDate><description><![CDATA[Sapphire & LED Seminar powered by Yole Développement on June 21 in Seoul. Register now!]]></description></item><item><title><![CDATA[Research combines LED, power transistor in GaN chip
]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10600</link><pubDate>Friday, 14 Jun 2013 23:39:41</pubDate><description><![CDATA[A team of researchers from the Smart Lighting Engineering Research Centre at Rensselaer Polytechnic Institute has integrated an LED and a power transistor on a single gallium nitride (GaN) chip. ]]></description></item><item><title><![CDATA[Northrop Grumman begins sampling new gallium nitride packaged power amplifier for military, commercial high-power amplifier needs]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10583</link><pubDate>Wednesday, 12 Jun 2013 00:09:29</pubDate><description><![CDATA[Northrop Grumman Corporation (NYSE:NOC) has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-band communication applications. This product represents the first commercial availability of a packaged, GaN-based component from the company.
]]></description></item><item><title><![CDATA[Peregrine semiconductor completes collaborative sourcing and UltraCMOS® license agreement with Murata]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10584</link><pubDate>Wednesday, 12 Jun 2013 00:09:29</pubDate><description><![CDATA[License covers advanced RFSOI- based design, process and third-party sourcing.]]></description></item><item><title><![CDATA[RFMD introduces 500 Watt GaN L-band amplifier
]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10566</link><pubDate>Thursday, 6 Jun 2013 23:12:49</pubDate><description><![CDATA[RFHA1027 supports radar architectures requiring ruggedness and reliability.
]]></description></item><item><title><![CDATA[Epitaxial SiC films grown on 300mm Si wafers]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10561</link><pubDate>Thursday, 6 Jun 2013 02:24:25</pubDate><description><![CDATA[Potentially an ultimate barrier film for GaN on silicon.
]]></description></item><item><title><![CDATA[Nitronex qualifies the rugged and reliable NPT1015 GAN HEMT]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10540</link><pubDate>Friday, 31 May 2013 02:08:08</pubDate><description><![CDATA[Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully qualified the robust NPT1015 GaN discrete transistor. 
]]></description></item><item><title><![CDATA[Element Six acquires the assets & intellectual property of Group4 Labs, Inc to expand portfolio of synthetic diamond materials for the semiconductor industry]]></title><link>http://www.i-micronews.com/lectureArticle.asp?id=10541</link><pubDate>Friday, 31 May 2013 02:08:08</pubDate><description><![CDATA[Synthetic diamond enables higher performance Gallium Nitride devices, resulting in smaller, faster and higher power electronic devices for defense and commercial applications.]]></description></item><item><title><![CDATA[Raytheon rides the wave of SiC’s efficiency]]></title><link>http://www.i-micronews.com/upload/Interviews/PowerDev_April2013_Raytheon.pdf</link><pubDate>Tuesday, 7 May 2013 16:06:40</pubDate><description><![CDATA[The company’s recently-opened £3.5 million 4-inch SiC foundry in Glenrothes, UK, will produce devices for both new entrants and established players, explain Paul D’Arcy, Business Unit Manager for Semiconductors, and Ewan Ramsay, Principal Engineer....]]></description></item><item><title><![CDATA[Sapphire ingot prices are at bottom, says USI Optronics]]></title><link>http://www.i-micronews.com/upload/Interviews/USIO_iLEDmarch_web.pdf</link><pubDate>Tuesday, 13 Mar 2012 15:57:48</pubDate><description><![CDATA[The Toufen, Taiwan, based sapphire ingot supplier will seek to expand output as it anticipates new entrants will struggle to establish themselves in the market....]]></description></item><item><title><![CDATA[Transphorm hits hard 600 V target]]></title><link>http://www.i-micronews.com/upload/Interviews/PowerDev_Feb2012_Transphorm.pdf</link><pubDate>Thursday, 23 Feb 2012 13:28:41</pubDate><description><![CDATA[While other GaN developers are striving to develop 600 V devices, start-up Transphorm is already making them in pilot prototype production, say executives Primit Parikh and Carl Blake...]]></description></item><item><title><![CDATA[Rubicon strives to fill the capacity gap]]></title><link>http://www.i-micronews.com/upload/Interviews/Rubicon_Efficiensi.pdf</link><pubDate>Tuesday, 7 Jun 2011 14:46:28</pubDate><description><![CDATA[Raja Parvez, chief-executive officer of Rubicon Technology, Inc., talks about how his company is playing a pivotal role
in scaling the LED industry by supplying 6-inch diameter and larger substrates. Rubicon has become the de facto standard for ...]]></description></item><item><title><![CDATA[InPACT CEO argues on InP market recovery]]></title><link>http://www.i-micronews.com/interview.asp?id=31</link><pubDate>Friday, 25 Apr 2008 10:07:41</pubDate><description><![CDATA[InPACT is the primary producer of Indium Phosphide (InP) 2”, 3” and 4” substrates outside of Japan. The company sells the 2” diameter mainly for opto telecom and datacom chips; the 3” and 4” products are used  for high speed ICs and PICs.
InPACT ...]]></description></item></channel></rss>
