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> A new high-temperature 1200V/10A SiC MOSFET now available ...
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Feb 28th, 2013
A new high-temperature 1200V/10A SiC MOSFET now available from CISSOID
CISSOID, the leader in high-temperature semiconductor solutions, introduces CHT-NEPTUNE, a high-voltage power switch in TO-257 package, suitable for power converters and motor drives guaranteed for reliable operation up to +225°C.
CHT-NEPTUNE is a high-temperature, high-voltage, Silicon Carbide MOSFET specifically built for power converter applications in high-temperature and harsh environments. It is available in a hermetically-sealed TO-257 metal package – the case being isolated from the switch terminals – and features low junction-to-case thermal resistance (1.1°C/W). The product is guaranteed for reliable operation on the full range -55°C to +225°C. It has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (Tj=225°C). The device features a body diode that can be used as free-wheeling diode. Sources :
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