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Mar 6th, 2013
Supporting the power semiconductor industry the wide bandgap semiconductor alliance WISEA
For a sustained support of research in wide energy bandgap semiconductor materials and technologies, Fraunhofer IISB in Erlangen, Germany, and LAAS - CNRS, Toulouse, France, initiated the foundation of the Wide Bandgap Semiconductor Alliance WISEA.
Including the Chair of Electron Devices of the University of Erlangen-Nuremberg, Germany, and CEMES-CNRS, Toulouse, France, the alliance covers all aspects of research and demonstrator development and makes the respective facilities available to third parties in cooperative projects.
SiC technology on the advance. Structured SiC wafer. Picture: Fraunhofer IISB.
In order to facilitate the development and take-up of this technology, and based on an existing cooperation formed within the Programme Inter Carnot Fraunhofer (PICF 2010), the Fraunhofer Institute for Integrated Systems and Device Technology IISB and the CNRS institute Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS) together with their associates, the Chair of Electron Devices of the University Erlangen-Nuremberg (LEB) and the CNRS institute Centre d’Elaboration de Matériaux et d’Etudes Structurales (CEMES), formed the Wide Bandgap Semiconductor Alliance (WISEA). Together, the partners are able to offer a competence chain in wide bandgap semiconductor processing covering all aspects of research and demonstrator development.
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