Cree, Inc. (Nasdaq: CREE) and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta’s new generation of solar inverters, which utilize SiC power MOSFETs from Cree.
- SiC MOSFET Technology Can Significantly Improve Weight, Cost and Efficiency in PV Inverters
The use of SiC MOSFETs in the next-generation PV inverters can enable significant new milestones in power density, efficiency and weight.
Cree released the first silicon-carbide MOSFETs, used for their ability to cut losses and allow PV inverters to run at higher efficiencies and higher power densities, in 2011 and a dramatically improved, second-generation SiC MOSFET in 2013. Now, as a milestone product announcement, Delta Energy Systems, a subsidiary of Delta Electronics Group, one of the world’s largest and most respected providers of power management solutions, has incorporated Cree® SiC MOSFETs into its next-generation solar power inverter. Utilizing 1200-V SiC MOSFET’s from Cree in an 11-kW PV inverter, Delta has already been able to extend the DC input voltage range while maintaining and even increasing the maximum efficiency of its previous products. The Delta 11-kW booster, which employs Cree’s SiC MOSFET and now has 1-kV DC input instead of 900-V, is targeted for release in Q2 2013.
Packaged SiC MOSFETs from Cree are available from DigiKey and Mouser, and die are available from SemiDice.