Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully qualified the robust NPT1015 GaN discrete transistor.
The NPT1015 is a 28V, DC- 2.5GHz, 50W power transistor with 12dB saturated gain and 60% peak drain efficiency at 2.5GHz. The thermal resistance of the NPT1015 is 2.1°C/W, which is among the lowest in the industry in this power class. This GaN technology is capable of surviving the industry’s most severe robustness tests without significant device degradation.
Developed under an entirely new design process that incorporates thermal management improvements to significantly lower thermal impedance, the NPT1015 leverages Nitronex’s existing 28V NRF1 process platform, which has been in volume production since 2009. Devices from multiple wafers were mounted in a 50 ohm test circuit tuned for CW operation at 2.5GHz. The devices were operated at rated output power and subjected to a 15:1 VSWR at all phase angles. They showed 100% survivability with no measurable change in saturated output power.
“The NPT1015 is a robust next-generation product, as it incorporates significant design improvements that increase breakdown voltage and lowers thermal impedance. We are using these same techniques in our new 48V product line. Nitronex is very excited about the advancements in product robustness and reliability that put our GaNon-Si devices on par or ahead of competitive products that primarily use GaN-on-SiC,” said Greg Baker, president and CEO at Nitronex.
Nitronex’s patented SIGANTIC® GaN-on-Si process is the only productionqualified GaN process using an industry standard 4” silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, broadband, RADAR, commercial wireless, satellite communications and point to point microwave. Fullyqualified NPT1015 transistors are now available from stock to 12 weeks, and can be purchased through the Nitronex sales channel and distribution.
Nitronex, LLC, a Gaas Labs Company, is an innovative leader in the design and manufacture of gallium nitride (GaN) based RF solutions. Nitronex is the pioneer in developing high performance gallium nitride on silicon (GaN-on-Si) semiconductor solutions using its proprietary SIGANTIC® manufacturing process. Nitronex products enable high performance applications in the defense, communications, cable TV, and industrial & scientific markets. An ISO-9001 certified manufacturer, Nitronex was founded in 1999 and is headquartered in Durham, NC. Nitronex has been awarded 24 patents with 17 others pending. For more information, please visit the Nitronex web site at www.nitronex.com.