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Mar 14th, 2014
Direct growth of graphene on aluminium nitride on silicon
Researchers in France led by the CRHEA laboratory have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014].
Graphene layers has been most commonly grown on metal substrates or thin metallic films through catalytic growth in a chemical vapor deposition (CVD) reactor and then transferred on any surface. However as the transfer step represents an additional process complexity and costs and can degrade the quality of the graphene film, it appears more desirable to grow graphene directly on the final substrate. Graphitic films can also be grown directly on SiO 2/Si using plasma-enhanced CVD, but this lead to the formation of nanographene islands more than to a 2D film.
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