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May 28th, 2014
GaN-on-Si, a disruptive technology?
Webcast powered by Yole Développement – June 3, 2014 at 8:00 AM PDT
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Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) proudly announces its live event taking place on June 3 at 8:00 AM PDT: GaN-on-Si, a disruptive technology? To register, go to www.i-micronews.com, upcoming webcasts section or click here.

During this webcast, the French consulting company gives you the opportunity to discover the status of the GaN substrate industry: Yole’s experts will detail technological challenges and market trends. They will highlight the GaN substrate value chain and its evolution, and analyze the applications in the LED, Power Electronics and RF areas.

Among all widely diffused compound semi materials, GaN is the only one for which bulk crystal remains extremely expensive. Therefore, any alternate substrate to grow GaN epi is strongly welcomed. Silicon is seen as one of the most promising solutions as it offers large diameter, low cost and existing CMOS manufacturing capabilities all over the world.

RF was the first application trying to capture the added-value of GaN-on-Si for commercial products, with Nitronex in 1999 for example”, explains Jean-Christophe Eloy, President & CEO, Yole Développement. LED then joined the battlefield with Lattice Power, and more recently Toshiba and Bridgelux, aiming to displace sapphire domination. In power switching, pioneers were International Rectifier and EPC, followed by numerous new entrants since then, all targeting low cost, high power conversion efficiency devices. Only lasers seem linked to bulk GaN forever.

Agenda of Yole’s webcast includes the remaining challenges to spread GaN-on-Si over all possible applications, from a market, technology, industry and IP viewpoint. Registration: here.

Featured speakers include:
•    Jean-Christophe Eloy, President & CEO
Since 1991, he has been involved in the analysis of the evolution of MEMS markets at device, equipment and also materials suppliers’ level. Jean-Christophe Eloy is also board member in several organizations in Europe and in North America.
•    Dr Philippe Roussel, Business Unit Manager, Compound Semiconductors, Power Electronics & LED
Dr Roussel hold s a PhD in Integrated Electronics Systems from the National Institute of Applied Sciences (INSA) in LYON. He joined Yole Développement in 1998 and is leading the Compound Semiconductors, LED, Power Electronics and Photovoltaic department.

Yole Développement’s reports presented during this live event, GaN-on-Si, a disruptive technology?

•    RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2010-2020
Publication date: May 2014
This report covers the RF GaN device technology including RF GaN market analysis, commercial available products overview, RF GaN substrates overview, industrial landscape. It also details RF GaN HEMT applications. Yole analyzed the adoption of RF GaN-on-Si & GaN-on-SiC technologies in possible applications. Report includes volume & forecasts until 2020.

•    GaN-on-Si Substrate Technology and Market for LED and Power Electronics
Publication date: March 2014
This analysis includes GaN-on-Si technology growth, challenges and solutions. It is an overview of GaN-on-Si epiwafer playground. This report provides an in-depth analysis of the GaN-on-Si technology for LED and power electronic applications, including technology and cost aspect.

•    GaN-on-Silicon Substrate Patent Investigation
Publication date: April 2014
This patent analysis details the technological challenges and known solutions. It is an overview of the main players and up to 2020 market volume & revenue forecasts. Analysts give a deep understanding of the IP landscape and identify key patents per technology issues or patent assignee.

•    LED Front-End Manufacturing Trends report
Publication: April 2014
This analysis gives a better understanding of the LED front-end manufacturing technical trends. It describes the supply chain and each related process steps. It also details key players and their positioning in this industry. This report includes market metrics from 2014 to 2019 at both LED devices and material/equipment levels.

•    LED Front-End Equipment Market
Publication date: May 2014
Under this report, Yole’s analyst provides a better understanding of the current process flow, process steps and technological trends in LED front-end manufacturing. He details the importance of cost reduction in this area as well. Moreover, he evaluates emerging substrates and related technologies including GaN-on-GaN LEDs and GaN-on-Si LEDs.

•    Power GaN
Publication date: To be released in June 2014
This report provides a complete analysis of the GaN device and substrate industry in the power electronics field along with key market metrics. It provides company involvement as well as technology state-of-the-art. In addition, an extensive review of the possible substrates for GaN is provided, offering the most complete view of the Power GaN industry available to date.

Detailed descriptions are available on www.i-micronews.com, reports section.


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