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Jun 3rd, 2014
A new 600V GaAs power devices by Clifton GmbH
Clifton GmbH unveiled a unique epitaxy (epi) technology to produce high-voltage Gallium Arsenide (GaAs) semiconductor material for diodes, transistors and intelligent power modules.
The new GaAs devices offer higher performances, more efficiency and reliability in smaller and lighter devices; all at lower manufacturing costs/prices compared to SiC and GaN products. The company's initial product is a 600V 15A PIN diode; and within 2 month, the company will add a 1200V device. The 600V device is offered as a 3.1mm chip for packaging into modules (such as those produced by Clifton's partner, Powersem GmbH) and in a TO247-2 package. Target applications for these PIN diodes include high-power switching power supplies, power factor correction circuits, solar inverters and uninterruptible power supplies.
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