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Jun 5th, 2010
 
Ostendo & Oxford Instruments-TDI now offering semi-polar GaN wafers for LED & LD device makers
 
Ostendo Technologies of Carlsbad, California and Technologies and Devices International, Inc. (TDI) of Oxfordshire, UK., part of the Oxford Instruments Group, have announced the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo's proprietary design and TDI's proprietary Hydride Vapor Phase Epitaxy (HVPE) technology. Ostendo technologies produces Curved LED backlit displays.
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This joint development now provides the opportunity to leading High Brightness HBLED and Laser Diode developers to increase optical efficiency significantly compared with structures grown on conventional c-plane GaN substrates. With TDI's HVPE technology the semi-polar GaN can be utilized in high brightness LEDs, laser diodes, and high electron mobility transistors (HEMTs).

 

 
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