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Nov 16th, 2010
GaN RF promises better performance than GaAs, Si power tech
RF Micro Devices unveils a GaN RF delivers superior performance versus competing GaAs and silicon power technologies.
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The RF3932, which comes on the heels of the 140W RF3934, operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%. It uses simple but optimised matching networks external to the package to provide wideband gain and power performance advantages in one amplifier. The device comes in a hermetic, flanged ceramic two-leaded package that uses RFMD's advanced heat sink and power dissipation technologies for high thermal stability and conductivity. The 75W RF3932 and the 140W RF3934 may be used for both driver and/or output stages, depending on overall power requirements.

RFMD's 48V, high power-density GaN semiconductor process affords devices high RF power density and efficiency, low capacitance, and high thermal conductivity to allow the development of compact and efficient high power amplifiers for private mobile radio, 3G/4G wireless infrastructure, ISM (industrial scientific & medical), military and civilian radar, CATV transmission networks and other applications.


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