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Nov 30th, 2010
 
Sumitomo Electric Industries, Ltd. to begin large scale production of 2-inch diameter semipolar/nonpolar GaN substrates for green lasers
 
Sumitomo Electric has reportedly been developing manufacturing technology for semipolar and nonpolar gallium nitride (GaN) substrates. Since Sumitomo Electric developed green semiconductor lasers in 2009, the company has been developing manufacturing technology for semipolar and nonpolar GaN substrates.
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The company anticipates that these materials will improve the performance of green semiconductor lasers and white LEDs. Thus far, the company has successfully devised manufacturing technologies that inhibit piezoelectric effects on polarized substrates, thereby improving device luminous efficiency. 
 
In contrast to conventional methods of manufacturing semipolar and nonpolar GaN substrates, which vertically or diagonally slice GaN crystals along the c-plane, Sumitomo Electric has developed H-VPE (hydride vapor phase epitaxy) manufacturing technology for large scale production of 2-inch substrates. In this way the company has overcome the obstacle of the relatively small crystals that the conventional method produces, in order to begin mass production of higher efficiency LEDs.


 
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