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Dec 8th, 2010
Panasonic and imec present thin film packaged MEMS resonator with industry record Q factor and low bias voltage
Panasonic and imec present at the International Electron Devices Meeting in San Francisco an innovative SiGe (silicon germanium) thin film packaged SOI-based MEMS resonator featuring an industry-record Q factor combined with a low bias voltage.
The high Q factor was achieved by implementing a resonator that operates in a torsional vibration mode, and, by vacuum encapsulation of the resonator in a thin film package. This groundbreaking resonator paves the way towards miniaturization and low power consumption of timing devices used in a variety of applications such as consumer electronics and automotive electronics.
Fig 1 & Fig 2: Illustration of the torsional vibration mode and a SEM of a cross-sectional structure of the developed packaged MEMS resonator.
The narrow 130nm gap between the beam and drive and sense electrodes enables a low bias voltage (1.8Vdc) and thus eliminates a charge pump in the oscillator circuit. Moreover, using sacrificial layer etching through a microcrystalline silicon germanium layer minimizes the chances of deposition of the sealing material inside the cavity and thus enables to position the etching holes right above the beam surface, leading to a smaller chip size.
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