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Dec 18th, 2010
Hamamatsu enhances IR sensitivity by MEMS structures
Recently Hamamatsu has announced a number of silicon-based sensors with enhanced NIR sensitivity.
These sensors are said to utilize MEMS structures fabricated by using "unique laser processing technology" to achieve a significant enhancement of NIR sensitivity. Another explanation of MEMS action is on Electro Optics site: "Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface, which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm."
In case of BSI FT-CCD the MEMS structure is formed at the backside and NIR extension is somewhat less than in the PIN diode case, see Figure 2 (Hamamatsu NIR CCD)..
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