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Jun 2nd, 2011
RFMD introduces GaN unmatched power transistor family
RFMD introduces the development of its GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors.
Using an advanced 0.5 μm GaN high electron mobility transistor (HEMT) semiconductor process, these high performance amplifiers show excellent peak drain efficiency and flat gain over a broad frequency range in a single amplifier design. The RF393x family (RF3931, RF3932, RF3933, RF3934) consists of 30 to 120 W GaN unmatched power transistors assembled in a two-lead flange ceramic package, which provides excellent thermal stability and is ideally suited for CW and pulsed applications. Ease of integration and tuning is accomplished through the incorporation of simple optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
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