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Aug 30th, 2012
National Central University Taiwan develops GaN-on-Si power devices with AIXTRON reactor
AIXTRON SE announced a new MOCVD system order from National Central University (NCU) in Taiwan. Existing customer, NCU has placed an order for one 1x6-inch AIXTRON Close Coupled Showerhead MOCVD system, which will be dedicated to the growth of GaN epitaxial structures on 6-inch silicon substrates, for use in the research and development of power management devices.
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AIXTRON’s local support team has installed and commissioned the new reactor in the state-of-the-art cleanroom facility at NCU’s Microwave and Optoelectronic Devices Laboratory.

Professor Jen-Inn Chyi, Chair Professor of Electrical Engineering at the National Central University of Taiwan, comments, “Demand for low-cost GaN-based power devices in high-efficiency and high-power systems continues to increase. To satisfy this need we therefore plan to transfer our specially developed semiconductor materials technology to industry, for a pilot initially, and then for large-scale production. In order to succeed in this venture, the very best deposition equipment will be required, such as the AIXTRON multi-wafer MOCVD system on order. This system is an excellent match for the heteroepitaxial growth of gallium nitride structures on large area silicon wafers, with a view to providing high-performance devices as cost-efficiently as possible. Furthermore, the excellent reputation of the AIXTRON support service gives us great confidence for this very important new project.“

The National Central University (NCU) of Taiwan has a strong global reputation for research and academic excellence. Through its cooperative education programs and research projects, cutting-edge research and innovative learning, NCU will remain a first-rate university in Taiwan and worldwide. NCU research programs are wide ranging and include complex systems, liquid-crystals, neural networks, phonon and photon lattices, semiconductors, magnetic thin-films and superconductivity.



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