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Sep 12th, 2012
Agnitron Technology develops AlGaN compact MOCVD system
Agnitron Technology, Inc. announced that its development of the original state of the art compact MOCVD research and development system, known as Agilis, is complete.
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The small volume reactor system provides an economical choice to universities and research and development organizations looking for high temperature AlGaN, GaN or general III-Nitride growth capabilities. The compact size enables reduced startup costs for R&D work as well as significantly reduced operating costs as precursor consumption is greatly reduced.

Agilis is packed full of features typically only found on larger MOCVD systems but with the simplicity, convenience and economy of a compact system. The modular design provides versatility primed for research and development applications and makes switching between growth materials fast and simple. The vertical quartz tube reactors are available with one or three wafer succeptors for wafer sizes from 25-50mm. Water cooled reactor walls and base plate as well as separate injection for alkyls and hydrides deliver exceptional process control and stability. Induction heating enables epitaxial growth in high temperature models up to 1500°C with excellent temperature uniformity. An emissivity corrected pyrometer with feedback loop is used for precise control of the wafer temperature. Standard configuration for metal organic (MO) sources is provided with a capacity of up to five metal organic precursors.

Agnitron Technology, Inc. was founded in 2008 and is located in Eden Prairie, MN. They specialize in developing emerging compound semiconductor material and device technologies into profitable commercial products as well as economical custom MOCVD equipment solutions. Their diverse team and partners draw from backgrounds in physics, materials science, semiconductor processing and electrical and mechanical engineering. Collectively, this team is credited with more than 400 published manuscripts and over 50 patents.

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