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Nov 27th, 2012
 
TriQuint achieves record GaN reliability performance
 
TriQuint's new process enables more robust, high-efficiency RF devices.
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TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF products manufacturer and foundry services provider, has achieved record-setting gallium nitride (GaN) circuit reliability that exceeds previous industry standards.

TriQuint's new GaN benchmark supports highly-reliable integrated RF solutions that use less power, are compact, and serve wide frequency ranges. Any RF system can benefit from reduced maintenance and longer operational lifetimes arising from increased reliability such as commercial and defense RF infrastructure, broadband communications, first-responder radios and space-based applications.

"We're pleased to announce this new GaN reliability milestone," said James L. Klein, Vice President and GM for Infrastructure and Defense Products. "The achievement supports our foundry services and helps us accelerate product development. We are delivering more products and services than ever before."

TriQuint's TQGaN25 process, qualified to operate up to 40 Volts, has achieved a mean time to failure (MTTF) of greater than 107 (10 million) hours* at 200 degrees (C) and greater than 106 (1 million) hours* at 225 degrees (C). This reliability milestone was achieved with TriQuint's newly-released Generation II 0.25-micron GaN on SiC (silicon carbide) process utilized for GaN product solutions and Foundry Services.

TriQuint achieved its new GaN performance through in-house development programs. This new reliability also supports objectives of TriQuint's Defense Production Act (DPA) Title III contract that is funded by the Department of Defense Tri-Services laboratories including the U.S. Air Force, Army and Navy. TriQuint is also reducing manufacturing cycle times and increasing yields while making other GaN enhancements that work hand-in-hand with DPA Title III goals.

All manufacturing enhancements are designed to support greater affordability of next-generation AESA (active electronically scanned array) radars, new EW systems and commercial applications. Defense systems currently in technology development phases have production planned for 2016-2020.

TriQuint announced the reliability of its TQGaN25 process in connection with the Defense Manufacturing Conference (DMC), November 26-29 in Orlando, Florida. Visit TriQuint in Booth 328 or contact TriQuint to schedule a meeting about GaN, gallium arsenide (GaAs), or advanced acoustic filter technology including SAW and BAW solutions for commercial and defense systems.

*MTTF ratings are based on device junction temperatures of 200 degrees and 225 degrees centigrade(C).

For information about GaN-based amplifiers, transistors, high-power switches, integrated assembly capabilities and DoD accredited Trusted (Category 1A) Foundry Services including packaging, post-processing and test, contact TriQuint Business Development or visit www.triquint.com/defense.  Register to receive product updates and TriQuint's newsletter.

FACTS ABOUT TRIQUINT

Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world’s top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry’s broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing,  TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies.  The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com.


 
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