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Dec 18th, 2012
HexaTech awarded ARPA-E contract for Aluminum Nitride (AlN) high voltage power electronics
HexaTech, Inc. will develop Aluminum Nitride technology for power devices to more efficiently control the flow of electricity across high-voltage electrical lines. The future “Smart Grid” requires new high efficiency, high frequency power conversion electronics to decrease the cost of electricity transmission while increasing overall grid security and reliability. This development is the first step to establish the epitaxial growth techniques and demonstrate the superior high-voltage performance capability for AlN-based 20 kV power devices.
HexaTech has received a $2.2 M award from the U.S. Department of Energy Advanced Research Projects Agency – Energy (ARPA-E) that will enable the development of a new power semiconductor technology for the modernization of our electrical power grid. HexaTech’s high-quality Aluminum Nitride (AlN) technology was identified by the Department of Energy as a transformational, breakthrough technology with significant technical promise.
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