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Analysts help CS International to hit a new high

Great talks by leading analysts have highlighted opportunities to increase compound semiconductor chip sales

Now in its fifth year, CS International hit a new high by assembling its strongest ever line-up of speakers.

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Transphorm and ON Semiconductor announce the start of production of co-branded GaN power devices

Transphorm’s high-voltage EZ-GaN™ now being adopted into consumer computing applications.

Transphorm Inc. announced at APEC 2015, in partnership with ON Semiconductor, the introduction of two co-branded 600V gallium nitride (GaN) cascode transistors and a 240W reference design that utilizes them.

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GaN Systems announces GaN power devices with top side cooling

GaN Systems’ gallium nitride power semiconductors now with topside cooling for simpler PCB design.

GaNPX™ packaging enables use of conventional heat dissipation techniques.

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Epistar licenced ALLOS’ GaN-on-Si epiwafer technology

Epistar licenced GaN-on-Si technology from ALLOS Semiconductors and concluded the first phases of the technology transfer successfully.

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EPC demonstration board featuring eGaN FETs achieves 96.7% efficiency in a conventional fully regulated, isolated eight brick DC-DC converter topology

500 Watt eighth brick DC-DC converter achieves 96.7% efficiency – EPC demonstration board featuring eGaN FETs delivers fully regulated, isolated output 12 V, 42 A output.

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Infineon and Panasonic will establish dual sourcing for normally-off 600V GaN power devices

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic Corporation (TSE: 6752) have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structureintegrated intoInfineon’s surface-mounted device (SMD) packages.

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