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Mar 7th, 2011
6” wafer capability for CPV solar applications
IQE are being recognised for developing epitaxial processes for producing high efficiency, triple junction concentrator photovoltaic (CPV) solar cells with comparable results on both 6 inch diameter germanium (Ge) and gallium arsenide (GaAs) substrates.
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IQE has been supplying the global chip industry as a pure-play contract manufacturer for more than two decades and is established in GaAs based epiwafer products for wireless applications including RF components for mobile phone handsets. The Group has been working with a number of key partners during the last two years to develop advanced, multi-junction solar technologies for the provision of large scale renewable energy.

Increased wafer sizes are an essential step in ensuring the provision of high quality and highly efficient solar power generation at lowest possible cost. Current CPV technology is based on 4” diameter wafers but IQE’s new capability has demonstrated unsurpassed performance and excellent uniformity across 6” (150mm) diameter wafers. Peak multi-sun device performance is the same for both types of substrate and approaches the best previously achieved on 4” substrates using the same process.



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