To download the latest issue
Mar 19th, 2013
APEI and GaN Systems demonstrate high efficiency DC-DC boost converter with ultra-high speed gallium nitride switch
The converter demonstrated at APEI, Inc. exploited the ultra-high switching capability of GaN Systems’ high power switch to achieve a 1 MHz switching capability.
Arkansas Power Electronics International (APEI), Inc. and GaN Systems Inc. announced the test results for a gallium nitride power switch based DC-DC boost converter. The converter demonstrated at APEI, Inc. exploited the ultra-high switching capability of GaN Systems’ high power switch to achieve a 1 MHz switching capability. In addition, the boost converter was able to demonstrate over 98.5% efficiency at 5 kW output power. Testing demonstrated turn-on and turn-off transitions of only 8.25 ns and 3.72 ns, respectively.
Gallium nitride power switches offer increased system performance advantages over traditional power semiconductor devices when used in power conversion systems. “Wide bandgap semiconductor technology, such as gallium nitride, enables increased power density for modern power electronic systems,” said Dr. Ty McNutt, Director of Business Development at APEI, “and we are excited to be developing novel power packages and high performance systems around these ultra-high speed devices.”
More POWER ELECTRONICS news