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Jul 12th, 2013
Alchimer signs collaboration with CEA-LETI to evaluate metallization process for high aspect ratio TSV applications
Wet nanometric film deposition processes capable of delivering 20:1 aspect ratio TSVs at low cost of ownership.
Alchimer, S.A. announced a collaboration with the French research institute CEA-Leti to evaluate and implement Alchimer’s wet deposition processes for 300mm high-volume manufacturing. The project will evaluate Alchimer’s Electrografting (eG™) and Chemicalgrafting (cG™) processes for isolation, barrier and seed layers. When combined, Alchimer's wet deposition processes have been demonstrated to achieve 20:1 aspect ratio through silicon vias (TSVs) due to their ability to coat conformally regardless of via topography, diameter or depth.
eG is based on surface chemistry formulations and processes. It is applied to conductive and semiconductive surfaces and enables self-oriented growth of thin coatings of various materials, initiated by in-situ chemical reactions between specific precursor molecules and the surface. This process achieves a combination of conformality, step coverage and purity that cannot be matched by dry processes.
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