BreconRidge Corporation packaged and shipped over 90 Gallium-Nitride (GaN) modules to the Canadian Space Agency (CSA) as part of its corporate strategy to extend its core capabilities in next generation Micro Electronic Modules. This delivery is the latest step in BreconRidge’s goal to become a key partner with the Aerospace and Defense industries. Prior milestones include collaborative design and manufacturing contributions to programs involving defense and aerospace radars, radio-astronomy systems and defense communication systems.

“Emerging technologies like Gallium-Nitride require an innovative approach in all aspects of product design and manufacturing.” commented John Pokinko, VP Engineering at BreconRidge. “We are aggressively pursuing all opportunities to further our expertise in applying these new technologies in advanced RF and microelectronic solutions. Successful completion of the CSA GaN packaging contract represents a key stepping stone in this strategy.”

Gallium-Nitride leads an emerging class of semiconductor technologies designed to tackle the RF challenges of next-generation cellular network base stations and satellite communications systems. Compact packaging and stringent linearity requirements challenge today’s designers to meet heat dissipation and bandwidth allocation objectives. GaN based electronics offers the potential to cost-effectively address these challenges. The National Research Council’s Canadian Photonics Fabrication Centre (NRC-CPFC) was responsible for fabricating the GaN die used in this project at their world-class industrial grade facility. “Few companies in the Electronic Manufacturing Services sector have the capabilities to assemble and package Gallium-Nitride electronics.”, observed Cyril McKelvie, President at BreconRidge. “Being able to deliver these first modules is a reflection of our desire, skills and capabilities to address the emerging needs of the Aerospace and Defense sectors. Ultimately, our customers will benefit from our accumulated experience with Gallium-Nitride electronics.”