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Mar 6th, 2012
CEA-Leti and III-V lab demonstrate a fully integrated silicon photonics transmitter
CEA-Leti and III-V lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA-Leti, announced that they have demonstrated an integrated tunable transmitter on silicon.
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For the first time, a tunable laser source has been integrated on silicon, which represents a key milestone towards fully integrated transceivers.

The transmitter incorporates a hybrid III-V/Si laser-fabricated by direct bonding, which exhibits 9 nm wavelength tunability and a silicon Mach-Zehnder modulator with high extinction ratio (up to 10 dB), leading to an excellent bit-error-rate performance at 10 Gb/s. The results were obtained in the frame of the European funded project HELIOS (www.helios-project.eu), with the contribution of Ghent University-IMEC for the design of the laser and University of Surrey for the design of the modulator.

CEA-Leti and III-V lab also demonstrated single wavelength tunable lasers, with 21mA threshold at 20°C, 45 nm tuning range and side mode suppression ratio larger than 40 dB over the tuning range.

These results will be overviewed during the Optical Fiber Communication conference 2012 in Los Angeles (USA) on March 4-8, 2012.

For more information: http://www.nanowerk.com/news/newsid=24471.php


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