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Sep 3rd, 2012
 
Cree introduces 150-mm 4HN silicon carbide epitaxial wafers
 
Cree, Inc. (Nasdaq: CREE) announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers.
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Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase.

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. 150-mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.

“Cree’s ability to deliver high volumes of 100-mm epitaxial wafers is unrivaled in the SiC industry and our latest 150-mm technology continues to raise the standards for SiC wafers,” said Dr. Vijay Balakrishna, Cree materials product manager. “Our vertically integrated approach assures customers of a complete solution for high quality 150-mm SiC epitaxial wafers, providing industry leaders within the power electronics market the stable supply they demand.”

 

 
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