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May 29th, 2013
Delayed progress hits SiC and GaN power device prospects
As photovoltaic inverters become the latest application for wide-bandgap diodes and transistors, Yole Développement’s Philippe Roussel is cautious over the next advances.
The wide-bandgap semiconductors, GaN and SiC, are at a crossroads on their voyage to fulﬁ lling the potential they promise power electronics. Having already established themselves as valuable components for power supplies in highend servers, SiC devices are now surging into the market for Photovoltaic (PV) inverters. But the next most important milestone, commercial use in Electric and Hybrid Electric Vehicles (EV/HEV) still seems as far away as ever. And commercial 200V GaN devices still seem some distance from reaching the 600V level where most sales can be realised, and that manufacturers have long signalled would arrive soon.
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