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Jul 17th, 2014
 
Efficient Power Conversion (EPC) widens the performance gap with the aging power MOSFET with “Off-the-Shelf” high performance gallium nitride power transistors
 
Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards.
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Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

New eGaN FET Products with Supporting Development Boards

  • Lower On-resistance (RDS(on))
The new family of eGaN FETs cuts on-resistance, (RDS(on)), in half, enabling high current, high power density applications.
  • Improved Figure of Merit (FOM)

The latest generation of eGaN FETs cuts the hard-switching FOM in half compared with the previous generation for improved switching performance in high frequency power conversion applications.

  • Extended Voltage Range

Extending the performance benefits of GaN to 30 V enables higher power DC-DC converters, Point-of-Load (POL) converters, synchronous rectifiers for isolated power supplies, PCs, and servers.

  • Better Thermal Performance

Increased temperature capabilities and improved die layout improve the thermal and electrical performance of the Gen 4 family of devices allowing for higher power operation under all conditions.

Demonstrated Power Conversion Efficiency Improvements
To demonstrate the improved performance of these new eGaN FETs, two buck converters were built. The EPC9018 combines the 30 V EPC2023 FET as the synchronous rectifier with the 40 V EPC2015 as the control switch of a 12 V – 1.2 V DC-DC point of load (POL) converter.

The 12 V to 1.2 V, 40 A POL converter operating at switching frequency of 1 MHz achieved efficiencies above 91.5% and demonstrated the superior in-circuit performance of the latest generation of eGaN power devices compared to the state-of-the-art Si MOSFET modules.

The EPC9019, a 48 V – 12 V converter, uses the 80 V, EPC2021 as the synchronous rectifier switch with the 100 V EPC2001 as the control switch. The results of this 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieved efficiencies above 98%, again significantly outperforming a comparable converter using state-of-the-art silicon power MOSFETs.
Detailed results of these in-circuit demonstrations of eGaN FETs can be seen at http://bit.ly/EPCAN017.

Development Boards
To simplify the evaluation process of the latest high performance eGaN FETs, development boards are available to support easy “in circuit” performance evaluation of each new product being introduced (reference table given above). These boards include all the critical components on a single board that can be easily connected into any existing converter.

The EPC9014 and EPC9031 through EPC9035 development boards are half-bridge configurations with onboard gate drives, featuring various eGaN power transistors. All boards are 2” x 1.5” and contain two eGaN FETs using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. Each board contains all critical components and layout for optimal switching performance.

The EPC9018 and EPC9019 development boards mentioned above are also available for easy “in circuit” performance evaluation.

 

 
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