Veeco Instruments Inc. (Nasdaq: VECO) announced that Epistar Corporation, headquartered in Taiwan, recently selected the K465iTM TurboDisc® gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for development of light emitting diodes (LEDs) grown on silicon substrates.

M. J. Jou, Ph.D., President of Epistar, commented, “We are pleased to choose Veeco’s K465i as our GaN-on-Si development tool. We are excited about the potential of GaN-on-Si technology as we move to larger wafer sizes. We appreciate the strong support from Veeco, and look forward to this collaboration.”

William J. Miller, Ph.D., Veeco’s Executive Vice President, Process Equipment, commented, “We are very pleased that Epistar has chosen the K465i, which provides low cost-of-ownership and production worthiness, for its GaN-on-Si LED development. Large diameter Si wafers offer tremendous promise as a low cost alternative to sapphire for volume production of lower cost LEDs.”