webleads-tracker

Home  >  POWER ELECTRONICS  > Fairchild Semiconductor's Silicon Carbide (SiC) solution is ...
  >  POWER ELECTRONICS
Nov 14th, 2012
 
Fairchild Semiconductor's Silicon Carbide (SiC) solution is available for sample
 
SiC bipolar junction transistors (BJTs), first in the product portfolio, offer lowest total power losses at high operation temperatures.
Send to a friend

In an effort to achieve higher power density, and to meet strict efficiency regulations and system up-time requirements, industrial and power electronic designers are challenged with constantly reducing power losses and improving reliability in their designs. However, improving these critical design capabilities in applications like renewable energy, industrial motor drives, high-density power supplies, automotive, and down-hole can complicate a design as well as drive overall system costs higher.

To help designers meet these challenges, Fairchild Semiconductor (NYSE: FCS), a leading global supplier of high-performance power and mobile semiconductor solutions, extends its leadership position in innovative high-performance power transistor technology with the announcement of silicon carbide (SiC) technology solutions ideally suited for power conversion systems.

Fairchild's SiC Solutions for Success:
By introducing SiC-based offerings into its product mix, Fairchild reinforces its product leadership in innovative, high-performance power transistor technology.

Fairchild's SiC capabilities include:
Optimized, semi-standard, and customized technical solutions that take advantage of its large portfolio of semiconductor devices and module packaging technologies.

Advanced technologies that simplify engineering challenges with functional integration and design support resources that minimize components while reducing engineering time.

Meeting the needs of device manufacturers and chipset suppliers by integrating leading device technologies into smaller advanced packages that offer size, cost and power advantages.

Among the first products to be released in Fairchild's SiC portfolio is a family of advanced SiC bipolar junction transistors (BJTs) that offer high efficiency, high-current density, robustness, and easy high-temperature operation. By leveraging exceptionally efficient transistors, Fairchild's SiC BJTs enable higher switching frequencies due to lower conduction and switching losses (ranging from 30-50 percent) that provide up to 40 percent higher output power in the same system form factor.

Enabling the use of smaller inductors, capacitors and heat sinks, these robust BJTs can lower overall system costs up to 20 percent. With performance levels that drive much higher efficiency and superior short-circuit and reverse bias safe operating area, these industry-leading SiC BJTs will play a significant role in optimizing the power management of high-power conversion applications.

Fairchild, as part of a complete silicon carbide solution, also has developed “plug-n-play” discrete driver boards (a 15A and 50A version) that, when used in conjunction with Fairchild's advanced SiC BJTs, not only provide increased switching speeds for reduced switching losses and better reliability, but also allow designers to easily implement SiC technology into their applications. Application notes, which provide designers the additional support necessary to design with SiC devices, and reference designs that allow for the development of driver boards to meet specific application needs, are also available from Fairchild and are intended to reduce design time and shorten time-to-market. SiC BJT vs. Other SiC.

Most Efficient 1200 V Power Conversion Switch Ever Made

  • Lowest total losses, including switching, conduction and driver losses
  • Lowest switching loss at any given RON, of all 1200V devices

Straight-Forward Driving

  • Normally-off feature reduces risks, complexity and performance limiting designs
  • Stable base input that is not sensitive to over/under voltage peaks  

Robust and Reliable

  • High-rated operating temperature: Tj=175°C
  • Easy paralleling due to positive temperature coefficient for RON and negative temperature coefficient
  • for gain
  • Stable, rugged Vbe forward voltage and reverse blocking capability

Packaging and Pricing Information (in US 1,000 quantity pieces)
Fairchild's SiC BJTs are available in a TO-247 package and engineering samples are available now for qualified customers. 
Fairchild's expertise in power semiconductor devices is ideally matched with the growing silicon carbide marketplace. The company's SiC product portfolio will offer speed, flexibility and overall performance advantages not currently available from competitors. Committed to solutions for success, Fairchild continuously works with customers to deliver superior multi-market semiconductor products, emphasizing innovation, service and manufacturing excellence.

For more information on Fairchild's SiC technology, please visit: www.fairchildsemi.com/sic


 
More POWER ELECTRONICS news

Apr 16th
Apr 16th
Apr 16th
Apr 16th
Apr 9th
 
©2007 Yole Developpement All rights reserved                  Disclaimer | Legal notice | To advertise
Yole Développement: Le Quartz, 75 cours Emile Zola, 69100 Villeurbanne, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr