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Jan 5th, 2012
Fraunhofer fabs optoelectronic LDPD on CMOS image sensors for low light
Fraunhofer Institute for Microelectronic Circuits and Systems IMS researchers developed a new optoelectronic component for low-light CMOS image sensor applications.
Certain CMOS applications require pixels in excess of 10µm, compensating for low light in X-ray or astronomy image capture, among other environments. The sensors could also be used as 3D sensors based on the time-of-flight process, whereby light sources emit short pulses that are reflected by objects. The time-of-flight of the reflected light is then recorded by a sensor and used to create a 3D image. Also read: CMOS image sensors see growth beyond cellphones.
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