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Mar 28th, 2012
 
Fuji Electric Co. super junction MOSFET series is available
 
Fuji Electric’s Super Junction MOSFET device called SUPER J-MOS, is now available at 600V, exhibiting 70% reduction in On resistance.
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The SJ MOSFET structure
The SJ MOSFET structure

Amidst heightening concerns over the global environment, initiatives to become more environmentally friendly in the fields of IT and new energy, among others, are focusing attention on power semiconductors with efficient power conversion. In this context, demand exists for MOSFETs (metal-oxide-semiconductor field-effect transistor)—the principal devices used for power conversion in semiconductors—that improve energy efficiency to a greater extent than in the past. In response, Fuji Electric is releasing the Super J-MOS series featuring its newly developed superjunction (SJ) structure, which achieves low on-resistance performance and significantly reduces energy loss.

With the release of the new series, Fuji Electric intends to contribute to the realization of a low-carbon society by improving power conversion efficiency and reducing power consumption in equipment.

Features:

  • 70% reduction in on-resistance, thereby achieving industry-leading performance in low power loss, compared to previous Fuji Electric products
  • The latest switching loss reduction technology, enabling a 14% reduction in total loss from the device, compared with previous Fuji Electric products

Specifications (for representative models)

Rated voltage (V) Rated current (A) On-resistance (Ω) Package Time of sales release
600V 20A 0.19 TO-220F, TO-220 December 22, 2011
30A 0.125 TO-3P, TO-247 April 2012
47A 0.07 TO-3P, TO-247 April 2012
68A 0.04 TO-247 April 2012

Main applications

  • Information and communications equipment including internet servers, uninterruptible power supply systems, and broadcasting equipment
  • Photovoltaic power conditioners and other power conversion equipment for new energy field

 

 


 
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