Fig 2: Fujitsu GaN Power Device Prototype -TO247 Package.

Fig 2: Fujitsu GaN Power Device Prototype -TO247 Package.

Fujitsu Semiconductor plans to commercialize GaN power devices on a silicon substrate, increasing the diameters of the silicon wafers and enabling low-cost production. The company began work on GaN technology in 2009 and has provided specific power-supply-related partners with sample GaN power devices since 2011. Since then, Fujitsu has worked on optimizing them for use in power supply units.

Fig 3: Efficiency comparison between Fujitsu’s GaN power device and conventional Si-based power device.

Fig 3: Efficiency comparison between Fujitsu’s GaN power device and conventional Si-based power device.

Collaboration with Fujitsu Laboratories Yields Impressive Results
Fujitsu Semiconductor collaborated with Fujitsu Laboratories Limited on several key technical initiatives, including the development of the process technology for growing high-quality GaN crystals on a silicon substrate. The collaboration also developed device technologies, such as optimizing the design of electrodes to control the rise of on-resistance during switching, and devising a circuit layout for power supply units that can support high-speed switching of GaN-based devices.

The results enable Fujitsu Semiconductor to achieve conversion efficiency that exceeds the performance of conventional silicon devices by using a GaN power device in a power-factor-correction circuit. For example, Fujitsu Semiconductor created a prototype server power-supply unit incorporating a power-factor-correction circuit based on GaN technology that achieved output power of 2.5kW. This impressive performance makes GaN power devices suitable for use in high-voltage, large-current applications.

Fujitsu Semiconductor has established a mass-production line for 6-inch wafers at its Aizu-Wakamatsu plant, and will begin full-scale production of GaN power devices in the second half of 2013. By offering GaN power devices optimized for customer applications and technology support for circuit designs, Fujitsu Semiconductor will support the development of low-loss, compact power supply units for a wide range of uses.

Fig 4: Output of power supply unit for servers with Fujitsu Semiconductor’s GaN power device.

Fig 4: Output of power supply unit for servers with Fujitsu Semiconductor’s GaN power device.

About Fujitsu Semiconductor America, Inc.
Fujitsu Semiconductor America, Inc. (FSA) is a leading designer and developer of innovative semiconductor products and solutions for new generations of consumer, communications, automotive and industrial products. FSA provides a comprehensive portfolio of high-quality, reliable semiconductor products and services throughout North and South America. Founded in 1979 and headquartered in Sunnyvale, California, Fujitsu Semiconductor America (formerly Fujitsu Microelectronics America) is a wholly owned subsidiary of Fujitsu Semiconductor Limited (FSL), Japan.

For product information, visit the company's website at http://us.fujitsu.com/semi, e-mail FSA_inquiry@us.fujitsu.com or call 1-800-866-8608. For company news and updates, connect with FSA on Twitter (http://twitter.com/FujitsuSemiUS), Facebook (https://www.facebook.com/FujitsuSemiconductorAmerica), or YouTube (http://www.youtube.com/FujitsuSemiUS).