To download the latest issue
Feb 26th, 2014
GT Advanced Technologies licenses PVD Technology from Kyma Technologies, Inc
Solution expands GT's GaN technology offering for producing low-cost, epi-Ready LED Wafers.
GT Advanced Technologies (Nasdaq:GTAT) announced that it has acquired exclusive rights from Kyma Technologies, Inc. for its plasma vapor deposition (PVD) process technology and know-how. The PVD of nano-columns (PVDNC™) technology developed by Kyma deposits a high-quality growth initiation layer of aluminum nitride (AlN) on wafers prior to gallium nitride (GaN) deposition. GT plans to commercialize a PVD tool that will complement its hydride vapor phase epitaxy (HVPE) system, which is currently in development. The combined offering will provide LED manufacturers with a higher throughput, lower cost solution to produce gallium nitride (GaN) templates on patterned or planar wafers. GT already has a high volume prototype tool incorporating Kyma's PVDNC technology and expects to offer a production-ready tool in the first half of 2015.
"Kyma's innovative "nano-columnar" PVDNC technology adds an important component to our expanding LED product base," said Tom Gutierrez, GT's president and CEO. "Our goal is to offer a range of solutions that improve the quality and lower the cost of LED manufacturing. The combination of GT's PVD AlN tool coupled with the HVPE system we are developing is expected to offer LED manufacturers a lower cost solution to producing epi-ready wafers compared with current manufacturing techniques."
About GT Advanced Technologies Inc.
More COMPOUND SEMI news