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Mar 7th, 2012
GaN Power Electronics will top one billion dollar in revenue in a couple of years... announces Yole Développement
Power GaN – 2012 edition, a report from Yole Développement
Yole Développement announces its report “Power GaN – 2012 edition”. In this report, Yole Développement provides a complete analysis of the GaN device and substrate industry in the power electronics field – market forecasts, company involvements, etc.
Slow ramp-up but huge expectations….
At very short term, IRF and EPC will likely remain the two main vendors of GaN power devices on the open market in early 2012. This market is likely to stay below $10M for devices, with the rest being made through R&D sales.
2013 should signal the transition from qualification to production ramp-up for several new entrants. The device market could reach the $50M threshold. In 2014, most of these new entrants will ramp-up their capacity, and by 2015 the availability and adoption of qualified 600V+ GaN devices should see the market grow very quickly, and open doors to non-consumer applications. In 2015, 12-15 players will share the consumption of more than 100,000 x 6” (equiv.) epiwafers.
“Beyond that, if GaN is qualified in the EV/HEV sector, GaN device business could top the billion dollar line and the GaN-on-Si substrate market could exceed $300M revenues by 2019”, explains Dr Philippe Roussel, Business Unit Manager, Power Electronics at Yole Développement. However, it is still unclear how car makers will choose between SiC, GaN or the current Silicon technology.
At the substrate end, R&D activities are still quite fragmented between several options involving GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-Silicon. Nevertheless, GaN-on-Si is likely to take a dominant position as 6” is now available with more than 7µm thick GaN epi and 8” is under qualification. 8” diameter availability is probably the parameter that will make this technology choice obvious.
It is now obvious that the GaN power world attracts numerous newcomers. Yole Développement’s team has screened 5 companies positioned on the epiwafer business side and more than 6 GaN device pure-players, aside to another 15 Si-based power firms developing GaN technology.
GaN power electronics cross-fertilizes with LED industry
GaN power electronics past, present and future business is inseparable to the LED industry. Both are linked in technology and market dynamics:
Thus, at the end of the day, Yole Développement will not talk about LED or Power sectors anymore, but rather about “GaN device industry” as main players could be the same….
A question of business model
For those who plan to enter in the GaN field, 2 scenarios could occur:
Yole Développement’s report provides a complete analysis of the GaN device and substrate industry in the power electronics field along with key market metrics. It provides company involvement as well as technology state-of-the-art. In addition, an extensive review of the possible substrates for GaN is provided, offering the most complete view of the Power GaN industry available to date.
Dr Philippe Roussel, Yole Développement
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